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OCT - DUALS
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AMPLIFIED
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APD
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HIGH-SPEED
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ARRAYS
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POWER & ACC
OEM Amplified (& Avalanche)
Photodetectors ( 30-mm & 35-mm boards )
Compact OEM 30-mm (A - E) / 35-mm (F & G) modules with comprehensive
amplified photodetector functions are ideal for CW, heterodyne (modulated), or pulsed measurements in the
SWIR, NIR, Visible and UV spectra, and ready for flexible integration and operation in end-user systems.
These modules feature a wide selection of ultra-low noise high-speed photodiodes,
including avalanche photodiodes (APD), in a variety of photosensitive areas, broad spectral response,
and high responsivity with coated optical windows for free-space operation, or optional FC/UPC fiber coupling on boards A - E only, with optional lens.
The photosensitive areas range from < 1 mm to 3.5 mm. The switch-selectable multi-gain amplifiers are selected for
low noise and linear response over wide operating bandwidth, with bandwidths above 1-GHz, and high gain to 1-GV/W;
the high-gain modules will require EMI shielding. The amplifiers are configured at a single level (for 1 GHz / 30-mm board),
3 levels (< 450 MHz / 30-mm board), 4 levels (< 450 MHz / 35-mm board), or 5-9 levels (to 1GV gain / 35-mm board).
The output impedance is 50-Ω at the optional SMA or MMCX output connector. Electrical-signal output is
DC (CW) coupled, and AC-coupling is optional. Boards A-E can output high current (> 100 mA) into low impedance instrumentation.
The photodiode can be oriented for optical input either on the component side (obverse), or on the bare side (reverse) of the board,
permitting full flexibility for input-beam alignment and gain adjustment. The output connector can also be configured in
orientation to user convenience. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω)
instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm
for full bandwidth performance. SMA-BNC (cable) adapters are optional. The bias voltage is fixed / regulated at the
operating level of the photodiode, and trimpot adjustability is available as an option. The SWIR models have fixed bias at < 1V.
Bi-polar external power in the range of 10-15 VDC (100-200 mA) is required. The 30-mm boards have a power cable umbilical,
while the 35-mm boards have an on-board power connector. Mounting holes are provided on the four corners of the board for 2-mm / 2-56 screws.
OEM pre-configured customized boards are also available for end user photodiodes and specifications.
Since these boards are in OEM format they require ESD precautions during handling and assembly.
The product possibilities in this OEM category are endless, encompassing a broad range of applications.
➚ Amplified Miniature
Photodetectors, OEM [ kHz-GHz ]
➚ Avalanche Photon Detectors, OEM [ kHz-GHz ]
[ InGaAs & Si : 2600 - 190 nm, kHz - GHz, 1kV/A - 1GV/A]
We highlight below a few products, and invite end user customization for specific development.
AVAILABLE MODULES & CONFIGURATIONS :
Modules in this OEM product line are assembled as follows:
[1] Select the 30-mm (A - E), or the 35-mm (F & G) Boards as a Platform
[2] Select the Photodiode for the required Spectral Range and Detection Area
[3] Configure the Photodiode Orientation (obverse or reverse)
[4] Specify the Photodiode Bias (Fixed, or 2 Adjustable Ranges)
[5] Specify Optical Entry : Free Space or FC/UPC Fiber Coupling
[6] Select the Gain-Bandwidth & Noise requirements
[7] Select the Amplifier Gain Setting(s), and Switch type (Fixed, 3X-slide, 4X-slide, 5-9 toggle)
[8] Select the Output Connector (SMA or MMCX), and its orientation
SPECIFICATIONS (Select products) :
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MODEL
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Type |
Spectrum |
Gain (V/A) |
Speed |
Responsivity |
Area |
Dark Current |
NEP (pW/rt.Hz) |
Coupling * |
Package ** |
Power |
US / Intl. |
|
CIT003 |
SWIR
InGaAs |
2600
- 1200 nm |
5/25/55k |
60/25/10
MHz |
1.05
A/W @ 2300 nm |
0.3-mmD |
0.5
μA |
10
|
FS / FC |
D - Mini-1 |
±10-15V |
1,350.00
/ 1,500.00 |
|
CIT007 |
SWIR
InGaAs |
2600
- 1200 nm |
100M |
5
kHz |
1.05
A/W @ 2300 nm |
0.3-mmD |
0.5
μA |
10
|
FS / FC |
E - Mini-1 |
±10-15V |
1,250.00
/ 1,400.00 |
|
CIT081 |
SWIR
InGaAs |
2600
- 1200 nm |
1 - 1000M |
20 - 1
kHz |
1.05
A/W @ 2300 nm |
1-mmD |
3
μA |
10
|
FS |
F - Mini-2 |
±10-15V |
1,350.00
/ 1,500.00 |
|
CIT152 |
SWIR
InGaAs |
2600
- 1200 nm |
80k |
5
MHz |
1.05
A/W @ 2300 nm |
1-mmD |
3
μA |
10
|
FS / FC |
A - Mini-1 |
±10-15V |
1,250.00
/ 1,400.00 |
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MODEL |
Type |
Spectrum |
Gain (V/A) |
Speed |
Responsivity |
Area |
Dark Current |
NEP (pW/rt.Hz) |
Coupling * |
Package ** |
Power |
US / Intl. |
|
MIT107 |
NIR
InGaAs |
1800
- 800 nm |
1k - 100M |
5 - 55
kHz |
0.95
A/W @ 1550 nm |
2-mmD |
2
nA |
1 |
FS
|
G - Mini-2 |
±10-15V |
1,350.00
/ 1,500.00 |
|
MIT138 |
NIR
InGaAs |
1800
- 800 nm |
1.2k |
450
MHz |
0.95
A/W @ 1550 nm |
0.3-mmD |
0.1
nA |
1 |
FS
/ FC |
B - Mini-1 |
±10-15V |
1,250.00
/ 1,400.00 |
|
MIT162 |
NIR
InGaAs |
1800
- 800 nm |
24k |
25
MHz |
0.95
A/W @ 1550 nm |
1-mmD |
0.8
nA |
1 |
FS
/ FC |
C - Mini-1 |
±10-15V |
1,350.00
/ 1,500.00 |
|
MIT215 |
NIR
InGaAs |
1800
- 800 nm |
500 |
1 GHz |
0.95
A/W @ 1550 nm |
0.08-mmD |
0.08
nA |
1 |
FS
/ FC |
E - Mini-1 |
±10-15V |
1,500.00
/ 1,650.00 |
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MODEL
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Type |
Spectrum |
Gain (V/A) |
Speed |
Responsivity |
Area |
Dark Current |
NEP (pW/rt.Hz) |
Coupling * |
Package ** |
Power |
US / Intl. |
|
JPL334 |
Si
(IR-Vis-UV) |
1000
- 320 nm |
500 |
1
GHz |
0.5
A/W @ 760 nm |
0.4-mmD |
0.01
nA |
1 |
FS
/ FC |
A - Mini-1 |
±10-15V |
1,500.00
/ 1,650.00 |
|
JPL435 |
Si
(IR-Vis-UV) |
1000 - 320 nm |
7k |
100
MHz |
0.6 A/W @ 840 nm |
3-mmD |
0.1
nA |
1 |
FS
|
D - Mini-1 |
±10-15V |
1,500.00
/ 1,650.00 |
|
JPL614 |
Si
(IR-Vis-UV) |
1000
- 320 nm |
100k - 1G |
1 - 55
kHz |
0.6
A/W @ 800 nm |
0.75-mmD |
0.01
nA |
1 |
FS
|
G - Mini-2 |
±10-15V |
2,000.00
/ 2,200.00 |
|
JPL731 |
Si
(IR-Vis-UV) |
1060 - 320 nm |
55/15/7k |
10 - 100
MHz |
0.65 A/W @ 900 nm |
1.25-mmD |
0.08
nA |
1 |
FS
/ FC |
C - Mini-1 |
±10-15V |
1,500.00
/ 1,650.00 |
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MODEL
|
Type |
Spectrum |
Gain (V/A) |
Speed |
Responsivity |
Area |
Dark Current |
NEP (pW/rt.Hz) |
Coupling * |
Package ** |
Power |
US / Intl. |
|
UCB111 |
UV-Si |
1100
- 190 nm |
80k |
5 MHz |
0.12
A/W @ 190 nm |
1-mmD |
0.02
nA |
3 |
FS / FC |
C - Mini-1 |
±10-15V |
2,000.00
/ 2,200.00 |
|
UCB253 |
UV-Si |
1100
- 190 nm |
1k - 100M |
5 - 55kHz |
0.12
A/W @ 190 nm |
3.5-mmD |
0.05
nA |
3 |
FS |
G - Mini-2 |
±10-15V |
1,500.00
/ 1,650.00 |
|
UCB318 |
UV-Si |
1100
- 190 nm |
1G |
500 Hz |
0.12
A/W @ 190 nm |
2.5-mmD |
0.03
nA |
3 |
FS |
B - Mini-1 |
±10-15V |
1,500.00
/ 1,650.00 |
|
UCB521 |
UV-Si |
1100
- 190 nm |
0.1 - 10M |
10 - 55 kHz |
0.12
A/W @ 190 nm |
1-mmD |
0.02
nA |
3 |
FS / FC |
F - Mini-2 |
±10-15V |
1,500.00
/ 1,650.00 |
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* FC available for Modules A - E only; F & G are Free-Space only
** SMA-BNC adapter
optional
PLEASE NOTE: Our APD products have internal voltages which can
attain 250 VDC. Extra precaution is absolutely essential to avoid any contact
with internal hazardous voltage levels.
These products are NOT TO BE OPERATED WHILE
DISASSEMBLED. We are not
responsible or liable in any way for any event or any failure related to high
voltage operation of these units.
Plastic hardware can be utilized to mount and hold the module (SAE 8-32
and ISO M4 0.7 threads provided).
Electrical connections (power and signal) should be made and verified
prior to connecting and switching power to the module.
OEM Avalanche
Photodetectors ( 30-mm boards )
[ InGaAs & Si : 1700 - 190 nm, kHz - GHz, 1kV/A - 1MV/A]
Please refer above to the comprehensive description and specifications of the available Modules and configurations.
Avalanche Photodetectors ( only available with 30-mm Modules A - E ) are presented below.
The product possibilities in this OEM category are endless, encompassing a broad range of applications.
We highlight below a few products, and invite end user customization for specific development.
SPECIFICATIONS (Select products) :
|
MODEL |
Type |
Spectrum |
Gain (V/A) |
Speed |
Responsivity |
Area |
Dark Current |
NEP (pW/rt.Hz) |
Coupling * |
Package ** |
Power |
US / Intl. |
|
INL107 |
NIR
InGaAs |
1700
- 900 nm |
1.2kV x M |
450
MHz |
9.3
A/W @ 1550 nm |
0.2-mmD |
50
nA |
< 1 |
FS
/ FC |
Mini-1 |
±15V, 100V |
2,250.00
/ 2,500.00 |
|
INL138 |
NIR
InGaAs |
1700
- 900 nm |
0.5kV x M |
800
MHz |
9.3
A/W @ 1550 nm |
0.2-mmD |
50
nA |
< 1 |
FS
/ FC |
Mini-1 |
±15V, 100V |
2,500.00
/ 2,750.00 |
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MODEL
|
Type |
Spectrum |
Gain (V/A) |
Speed |
Responsivity |
Area |
Dark Current |
NEP (pW/rt.Hz) |
Coupling * |
Package ** |
Power |
US / Intl. |
|
HRV334 |
Si
(IR-Vis-UV) |
1000
- 400 nm |
3.3-24k x M |
25 - 250
MHz |
< 50
A/W @ 800 nm |
0.2-mmD |
0.05
nA |
1 |
FS
/ FC |
Mini-1 |
±15V, 200V |
2,250.00
/ 2,500.00 |
|
HRV435 |
Si
(IR-Vis-UV) |
1000 - 400 nm |
0.5k x M |
1
GHz |
< 50 A/W @ 800 nm |
0.2-mmD |
0.05
nA |
1 |
FS
/ FC |
Mini-1 |
±15V, 200V |
2,500.00
/ 2,750.00 |
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MODEL
|
Type |
Spectrum |
Gain (V/A) |
Speed |
Responsivity |
Area |
Dark Current |
NEP (pW/rt.Hz) |
Coupling * |
Package ** |
Power |
US / Intl. |
|
UVA111 |
UV-Si |
1000
- 200 nm |
0.5k x M |
900 MHz |
25
A/W @ 600 nm |
0.2-mmD |
0.2
nA |
3 |
FS / FC |
Mini-1 |
±15V, 200V |
2,500.00
/ 2,750.00 |
|
UVA253 |
UV-Si |
1000
- 200 nm |
0.1/1/10M x M |
10 - 55kHz |
3
A/W @ 200 nm |
0.2-mmD |
0.2
nA |
3 |
FS / FC |
Mini-1 |
±15V, 200V |
3,000.00
/ 3,300.00 |
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Copyright (c) All Rights Reserved. Ultrafast
Sensors.
ALL
material in this website is the exclusive property of ULTRAFAST SENSORS.
Em dedicacão á Santa Familia de Nazaré - Maria, Nossa Senhora de Fatima, São José, e Senhor JESUS