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kHz / MHz / GHz  Balanced Photodetectors, OCT Imaging-Specific Configurations                                       
[ InGaAs & Si : 2600 - 190 nm, kHz - GHz ]                                                                                                           

 

The Dual Balanced Photoreceivers presented here are ideal for minute signal differentiation in heterodyne interferometry, optical coherence tomography - OCT imaging, spatial interferometry and spatial coherence, and optical pulse correlation. They feature a very wide selection of ultra-low noise high-speed photodiodes, in a large variety of photosensitive areas selected for broad spectral response in spectra ranging from mid-SWIR to far-UV, operating at high responsivity, and packaged with a coated optical window or ball lens to enhance free space or fiber coupled optical entry. The photodiodes are coupled to amplifiers, specifically selected for ultra-low noise and linear response over the full operating bandwidth, with independent waveguided signal paths. The output impedance is 50-Ω with DC-coupling on most modules, while some advanced models also feature AC / DC signal coupling at the mixed output. The native pre-mixed amplified signals are monitored on low frequency circuits typically with 1 V/mW conversion (or custom user specification) and are available individually for experimental adjustment. High-grade fully-flexible research platforms and chipsets are available, enabling multiple gain and bandwidth combinations for high-precision measurements. Custom configurations are offered which cover a variety of options in photodiode area, amplification, optical coupling, operating optical power, detector layout and geometry, and operating bandwidth. For example, we offer photodiodes oriented at right angles in the module case (please see Figure below) as opposed to our standard in-plane configuration. We also offer multi-function [un]balanced photodetector systems for complex optical-beam analysis. All units have connectorized SMA signal outputs which are optimized for low capacitance (~ 1pF), low impedance (50-Ω) instrumentation, data acquisition, and test equipment. The high-speed units specifically require low capacitance semi-rigid cable connections of < 15 cm for full-bandwidth performance. SMA-BNC cables and adapters are optional offerings. The modules are powered by external sources, typically requiring standard ± 15 VDC @ 300-1000 mA - regulated to operate all internal components, including the photodiodes and amplifiers. The bias voltage of each photodiode is regulated fixed / adjustable over the working range. The SWIR models have fixed bias at < 1V. All units are packaged in small plastic modules for convenient operation. M8x3 power entry socket and power switch with LED “ON” indication are standard. The PS-15XX Series AC power supplies are highly recommended - they are designed with linear regulation, rapid transient response, ultra-low noise operation with filters, high CMRR, thermal and overload protection, and reverse-polarity and multi-level ESD / surge protection from the AC input to the devices. Metric or SAE mounting holes are provided on each module with recommended / user-specified optional hardware epoxied to the case.  

 

• 5000 - 2000 nm [MWIR] ; 2600 - 1200 nm [SWIR] ; 1800 - 800 nm [NIR] ; 1000 - 350 nm [IR-Vis-UV] ; 1100 - 190 nm [UV]
• Responsivity :  SWIR : 1.1 A/W @ 2300 nm , NIR : 1 A/W @ 1550 nm , Vis : 0.5 A/W @ 800 nm , UV : 0.12 A/W @ 190 nm

• Free Space and multi-format Fiber Coupled ( FC - UPC, FC - APC (with adapter cables), SMA, ST, and others )
• Photosensing areas : 0.1-mm diameter to 3.5-mm diameter ( Large Area Photodiodes Available on ALL Modules excl. GHz )
• Bandwidth : DC - GHz / ps (max)
• IGDxxx / GDPxxx : GHz / ps Models designed for broadband multi-mW power levels and high difference-signal levels
• Research Grade Platform / Chipset (high-gain, wide-range measurements)
• OEM Custom-Fit Turnkey-Assembly
• TEC-Cooled Photodiode Assembly
• Full customization of photosensitive area, amplification & bandwidth, layout
• Photodiodes oriented in-plane (standard) or at right angles (customized)
• Amplifier Gain : 40 dB to >180 dB (Tunable Gain / Adjustable Gain)
• High mixed-difference signal gain (Fixed / Adjustable)
• Picowatt to Microwatt optical power level sensitivity
• Single and Multi-Stage Amplification
• Amplifier noise : < 4 nV / rt. Hz 
• Detector noise : nW - sub-pW / rt. Hz
• [AC/DC] Coupling optional on all high-end Multi / Multi-Gain Modules at mixed signal
• OCT Module Options : low noise wideband amps, adjustable gain and bias, AC/DC coupling, fiber optic coupling, photodiode cooling
• Regulated power for low noise and high stability over wide operating ranges
• Modular Package Requires External Power ± 15VDC (300 - 1000 mA)   
• Photodiode (optical input) spacing 38.1 mm (1.5 in)
• Module dimensions (≤ 150 MHz) : 95 mm x 60 mm x 25 mm ( 3.75 in x 2.4 in x 1 in )
• Module dimensions (≥ 300 MHz) : 60 mm x 47 mm x 24 mm ( 2.4 in x 1.85 in x 0.95 in)
• 2X mounting holes centered on linear 25-mm (1-in) spaced grid; optional ISO M4x0.7 or SAE 8-32 steel screws epoxied to case
• SMA 50-Ωhm RF signal output with BNC-adapter optional
• SMA connector orientation : Reference [R] / Mixed [M] / Signal [S] , [R] & [S] colinear with optical inputs , [M] centered between [R] & [S]
• SMA connector spacing 19.05 mm (0.75 in) between [R] , [M], & [S]

• Customized Models Available ( Wavelength, Detector Area, Bandwidth, Power / Amplification, etc. )

• Units in worldwide use at leading Research Institutions and leading High-Technology Industrial Laboratories
• Matched pair components available

 

      

    Data and Image credits :

    Picosecond high-speed resolution of pump-probe measurements on ferromagnetic Bi:YIG at 800 and 635 nm
    wavelengths, utilizing the GHz-Series GDP183, high-difference gain, dual-balanced photodetector modules, by
    Dr. Jacopo Albergoni, Max-Planck-Institut für Struktur und Dynamik der Materie, Hamburg, Germany.

    OCT ( Optical Coherence Tomography ) image of human tissue in the SWIR ( 2600 - 1200 nm ) spectrum,
    utilizing the SIR138 ( ultra-high gain, MHz-series)  OCT-Specific dual balanced photodetector modules, by
    Dr. Ernest Chang, Wellman Center for Photomedicine, Harvard Medical School, Massachusetts General Hospital.

 

SPECIFICATIONS:

 

MODEL	Type	Spectrum	Photodiode Gain	Mix Sig. Gain	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Coupling *	US / Intl.
SIR003	SWIR InGaAs	2600 - 1200 nm	10k	50X	15 MHz	1.05 A/W @ 2300 nm	0.3-mmD	0.5 μA	10	FS / Fiber	1,750.00 / 1,895.00
SIR017	SWIR InGaAs	2600 - 1200 nm	2.5k	20X	60 MHz	1.05 A/W @ 2300 nm	0.3-mmD	0.5 μA	10	FS / Fiber	1,750.00 / 1,895.00
SIR125	SWIR InGaAs	2600 - 1200 nm	1, 2.5, 5k	20,50,100X	≤ 60 MHz	1.05 A/W @ 2300 nm	0.3-mmD	0.5 μA	10	FS / Fiber	3,995.00 / 4,495.00
SIR137	SWIR InGaAs	2600 - 1200 nm	10,25,50k	50,100,200X	≤ 15 MHz	1.05 A/W @ 2300 nm	0.3-mmD	0.5 μA	10	FS / Fiber	4,995.00 / 5,595.00
SIR * * *	SWIR InGaAs	2600 - 1200 nm	Custom	Custom	Custom	1.05 A/W @ 2300 nm	0.3 / 1-mmD			FS / Fiber
MODEL	Type	Spectrum	Photodiode Gain	Mix Sig. Gain	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Coupling *	US / Intl.
IRN007	NIR InGaAs	1800 - 800 nm	1.3k	15X	150 MHz	0.95 A/W @ 1550 nm	0.3-mmD	0.1 nA	3	FS / Fiber	1,100.00 / 1,250.00
IRN012	NIR InGaAs	1800 - 800 nm	1k	8X	300 MHz	0.95 A/W @ 1550 nm	0.1-mmD	0.01 nA	5	FS / Fiber	1,450.00 / 1,575.00
IRN025	NIR InGaAs	1800 - 800 nm	0.6k	3X	600 MHz	0.95 A/W @ 1550 nm	0.1-mmD	0.01 nA	5	FS / Fiber	1,850.00 / 2,050.00
IRN031	NIR InGaAs	1800 - 800 nm	1, 5, 10k	15X	≤ 150 MHz	0.95 A/W @ 1550 nm	0.3-mmD	0.1 nA	5	FS / Fiber	1,650.00 / 1,795.00
IRN057	NIR InGaAs	1800 - 800 nm	1, 5, 10M	1000X	≤ 300 kHz	0.95 A/W @ 1550 nm	0.1-mmD	0.01 nA	< 1	FS / Fiber	1,750.00 / 1,895.00
IRN133	NIR InGaAs	1800 - 800 nm	1, 2.5, 5k	15,30,50X	≤ 150 MHz	0.95 A/W @ 1550 nm	0.3-mmD	0.1 nA	5	FS / Fiber	2,995.00 / 3,450.00
IRN152	NIR InGaAs	1800 - 800 nm	10,25,50k	25,50,100X	≤ 15 MHz	0.95 A/W @ 1550 nm	0.1-mmD	0.01 nA	4	FS / Fiber	3,995.00 / 4,450.00
IRN * * *	NIR InGaAs	1800 - 800 nm	Custom	Custom	Custom	0.95 A/W @ 1550 nm	Custom			FS / Fiber
GHz InGaAs
IGD005	NIR InGaAs	1800 - 800 nm	44dB	2X	1 GHz	0.95 A/W @ 1550 nm	0.08-mmD	0.01 nA	10	FS / Fiber	1,550.00 / 1,700.00
IGD007	NIR InGaAs	1800 - 800 nm	40dB	1.5X	1.5 GHz	0.95 A/W @ 1550 nm	0.08-mmD	0.01 nA	8	FS / Fiber	2,000.00 / 2,200.00
IGD014	NIR InGaAs	1800 - 800 nm	42dB	15X (23.5 dB)	1.5 GHz	0.95 A/W @ 1550 nm	0.08-mmD	0.01 nA	8	FS / Fiber	3,250.00 / 3,550.00
IGD038	NIR InGaAs	1800 - 800 nm	54dB	10X	1 GHz	0.95 A/W @ 1550 nm	0.08-mmD	0.01 nA	7	FS / Fiber	5,995.00 / 6,600.00
IGD162	NIR InGaAs	1800 - 800 nm	60dB	20X	1 GHz	0.95 A/W @ 1550 nm	0.08-mmD	0.01 nA	7	FS / Fiber	6,595.00 / 7,200.00
IGD * * *	NIR InGaAs	1800 - 800 nm	Custom	Custom	Custom	0.95 A/W @ 1550 nm	Custom			FS / Fiber
MODEL	Type	Spectrum	Photodiode Gain	Mix Sig. Gain	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Coupling *	US / Intl.
SDX003	Si (IR-Vis-UV)	1000 - 350 nm	1.3k	15X	150 MHz	0.6 A/W @ 800 nm	0.75-mmD	0.01 nA	3	FS / Fiber	1,050.00 / 1,200.00
SDX012	Si (IR-Vis-UV)	1000 - 350 nm	1k	8X	300 MHz	0.6 A/W @ 800 nm	0.75-mmD	0.01 nA	5	FS / Fiber	1,350.00 / 1,475.00
SDX037	Si (IR-Vis-UV)	1000 - 350 nm	0.6k	3X	600 MHz	0.5 A/W @ 750 nm	0.38-mmD	0.001 nA	5	FS / Fiber	1,750.00 / 1,950.00
SDX052	Si (IR-Vis-UV)	1000 - 350 nm	1, 5, 10k	15X	≤ 150 MHz	0.6 A/W @ 800 nm	0.75-mmD	0.01 nA	5	FS / Fiber	1,550.00 / 1,675.00
SDX078	Si (IR-Vis-UV)	1000 - 350 nm	1, 5, 10M	1000X	≤ 300 kHz	0.6 A/W @ 800 nm	0.75-mmD	0.01 nA	1	FS / Fiber	1,650.00 / 1,795.00
SDX173	Si (IR-Vis-UV)	1000 - 350 nm	1, 2.5, 5k	15,30,50X	≤ 150 MHz	0.6 A/W @ 800 nm	0.75-mmD	0.01 nA	5	FS / Fiber	2,995.00 / 3,450.00
SDX318	Si (IR-Vis-UV)	1000 - 350 nm	10,25,50k	25,50,100X	≤ 15 MHz	0.6 A/W @ 850 nm	2.85-mmD	0.1 nA	5	FS / Fiber	3,995.00 / 4,450.00
SDX * * *	Si (IR-Vis-UV)	1000 - 350 nm	Custom	Custom	Custom					FS / Fiber
GHz Silicon
GDP025	Si (IR-Vis-UV)	1000 - 350 nm	44dB	2X	1 GHz	0.5 A/W @ 750 nm	0.35-mmD	0.001 nA	10	FS / Fiber	1,550.00 / 1,700.00
GDP031	Si (IR-Vis-UV)	1000 - 350 nm	40dB	1.5X	1.5 GHz	0.5 A/W @ 750 nm	0.3-mmD	0.001 nA	8	FS / Fiber	2,000.00 / 2,200.00
GDP253	Si (IR-Vis-UV)	1000 - 350 nm	42dB	15X (23.5 dB)	1.5 GHz	0.5 A/W @ 650 nm	0.3-mmD	0.001 nA	8	FS / Fiber	3,250.00 / 3,550.00
GDP078	Si (IR-Vis-UV)	1000 - 350 nm	54dB	10X	1 GHz	0.4 A/W @ 750 nm	0.08-mmD	0.001 nA	7	FS / Fiber	5,995.00 / 6,600.00
GDP138	Si (IR-Vis-UV)	1000 - 350 nm	60dB	20X	1 GHz	0.4 A/W @ 650 nm	0.08-mmD	0.001 nA	7	FS / Fiber	6,595.00 / 7,200.00
GDP * * *	Si (IR-Vis-UV)	1000 - 350 nm	Custom	Custom	Custom		Custom			FS / Fiber
MODEL	Type	Spectrum	Photodiode Gain	Mix Sig. Gain	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Coupling *	US / Intl.
UVM017	UV-Si	1100 - 190 nm	5k	25X	> 1.5 MHz	0.12 A/W @ 190 nm	1-mmD	0.01 nA	5	FS / Fiber	1,050.00 / 1,200.00
UVM033	UV-Si	1100 - 190 nm	1M	25X	> 0.1 MHz	0.12 A/W @ 190 nm	1-mmD	0.01 nA	3	FS / Fiber	1,050.00 / 1,200.00
UVM055	UV-Si	1100 - 190 nm	2.5, 5,10k	100X	> 1.5 MHz	0.12 A/W @ 190 nm	1-mmD	0.01 nA	5	FS / Fiber	1,550.00 / 1,675.00
UVM078	UV-Si	1100 - 190 nm	1, 5, 10M	1000X	> 300 kHz	0.12 A/W @ 190 nm	1-mmD	0.01 nA	3	FS / Fiber	1,650.00 / 1,795.00
UVM123	UV-Si	1100 - 190 nm	1, 2.5, 5k	15,30,50X	1 MHz	0.12 A/W @ 190 nm	1-mmD	0.01 nA	5	FS / Fiber	2,995.00 / 3,450.00
UVM137	UV-Si	1100 - 190 nm	10,25,50k	25,50,100X	1 MHz	0.12 A/W @ 190 nm	1-mmD	0.01 nA	5	FS / Fiber	3,995.00 / 4,450.00
UVM * * *	UV-Si	1100 - 190 nm	Custom	Custom	Custom	0.12 A/W @ 190 nm	Custom			FS / Fiber

* FC, SMA, ST available - Additional Cost USD 110.00
** SMA-BNC adapter optional

 

 

MHz - Balanced Photodetectors with Photodiodes Oriented at Right Angles
[ InGaAs & Si : 2600 - 190 nm, kHz - MHz ]

The SRL, IZR, STR, and RUV are large-area, free-space photodiodes combined with maximum / adjustable ultra-low noise amplified gain.    .

SPECIFICATIONS:

MODEL	Type / R. A.	Spectrum	Photodiode Gain	Mix Sig. Gain	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Coupling *	US / Intl.
SRL713	SWIR InGaAs	2600 - 1200 nm	50, 100, 1000k	Custom	≤ 6 MHz	1.05 A/W @ 2300 nm	1-mmD	3 μA	10	FS only	3,995.00 / 4,495.00
IZR352	NIR InGaAs	1800 - 800 nm	15, 25, 50k	Custom	≤ 20 MHz	1.05 A/W @ 1550 nm	2-mmD	2 nA	4	FS only	3,495.00 / 4,000.00
STR138	Si (IR-Vis-UV)	1000 - 350 nm	2.5, 5, 10k	Custom	≤ 100 MHz	0.6 A/W @ 840 nm	3-mmD	0.1 nA	5	FS only	2,995.00 / 3,450.00
RUV438	UV-Si	1100 - 190 nm	100, 500, 1000k	Custom	≤ 1 MHz	0.12 A/W @ 190 nm	3-mmD	8 μA	10	FS only	2,995.00 / 3,450.00

 

 

kHz / MHz Signal Sum / Signal Difference Dual Channel Photodetectors
[ InGaAs & Si : 2600 - 190 nm, kHz - MHz ]

The VAS, UAN, NAI, and EAX are high responsivity DUAL photodetector units, which feature precision low noise Si- and InGaAs-based photodiodes, coupled with a 300-MHz sum or difference amplifier. These detectors are ideal for heterodyne (modulated), or pulsed photodetection. They feature a wide selection of ultra-low noise high-speed photodiodes in a variety of photosensitive areas, broad spectral response, and high responsivity with coated optical windows or ball lens for fiber coupling. Amplifiers are selected for low noise and linear response over the operating bandwidth. The output impedance is 50-Ω and some models feature AC / DC signal coupling at mixed output connector. All sum / difference units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation / test equipment. The high speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed / regulated-adjustable over the working range of each photodiode. The SWIR models have max bias at under 1V. They are packaged in small plastic modules for convenient operation. A 3.5-mm power entry socket and power switch with LED “ON” indication are standard. Metric and/or SAE mounting holes are provided with recommended optional nylon hardware.

• 1100 - 190 nm [UV] ; 1100 - 350 nm [IR-Vis-UV] ; 1800 - 800 nm [NIR] ; 2600 - 1200 nm [SWIR] ; 5000 - 2000 nm [MWIR]
• Responsivity :  UV : 0.12 A/W @ 190 nm , Vis : 0.5 A/W @ 800 nm , NIR : 1 A/W @ 1550 nm , SWIR : 1.3 A/W @ 2300 nm
• Free Space and Fiber Coupled ( FC - UPC, FC - APC, SMA, ST )
• Photosensing areas : 0.3-mm diameter to 1-mm diameter
• Bandwidth : DC - MHz / ps
• Amplifier Gain : 3 Steps (Adjustable Gain Available)
• Signal processing: Vout ~ 10 [ P_SOURCE ± P_REF ] (switch selected)
• High mixed signal gain ( 10X )
• Nanowatt to Microwatt optical power level sensitivity
• Amplifier noise : 1 - 4 nV / rt. Hz 
• Detector noise : nW -  pW / rt. Hz
• [AC/DC] Coupling on all 300-MHz Modules at mixed signal
• Regulated power for low noise and high stability over wide operating ranges
• Modular Package Requires External Power ± 15VDC - 300 mA 
• Photodiode (optical input) spacing 38.1 mm (1.5 in)
• Module dimensions : 95 mm x 60 mm x 25 mm ( 3.75 in x 2.4 in x 1 in ) with 4X mounting holes centered on 25-mm (1-in) square grid
• SMA 50-Ωhm RF signal output with BNC-adapter optional
• SMA connector orientation : Reference [R] / Mixed [M] / Signal [S] , [R] & [S] colinear with optical inputs , [M] centered between [R] & [S]
• SMA connector spacing 19.05 mm (0.75 in) between [R] , [M], & [S]

• Customized Models Available ( Wavelength, Detector Area, Bandwidth, Power / Amplification, etc. )  

• Units in worldwide use at leading Research Institutions and leading High-Technology Industrial Laboratories
• Matched pair components available

The specific features on these modules include:

 [1]  Three switchable photodiode bias settings (on internal microswitch; excl. EAXxxx). 
       This feature allows the user to adjust the performance for optimal noise and bandwidth
       at particular power level and speed requirements.

 [2]  Three amplifier gain-bandwidth settings on an internal microswitch for full input power flexibility.

 [3]  Internal switch selection of sum-or-difference output with 10X gain

SPECIFICATIONS:

MODEL	VAS025*	UAN013	NAI037*	EAX083*
Photodiodes	Planar Si	UV-Si	Planar InGaAs	SWIR InGaAs
Active Area (μmxμm)	0.75-mmD	1-mmD	0.3-mmD	0.3-mmD
Spectral Range (nm)	1100 to 350 [FS]	1100 to 190 [FS]	1800 to 800	2600 to 1200
SSGain / Bandwidth (MHz)	1 kV/A / 300 MHz 1.3 kV/A / 150 MHz 10 kV/A / 20 MHz	5 kV/A / 1.5 MHz 10 kV/A / 1.5 MHz 1 MV/A / 0.3 MHz	1 kV/A / 300 MHz 1.3 kV/A / 150 MHz 10 kV/A / 20 MHz	2.5 kV/A / 60 MHz 10 kV/A / 20 MHz 1 MV/A / 0.3 MHz
± Gain / Bandwidth (MHz)	10 / 300	10 / 1.5	10 / 300	10 / 60
Optical Coupling	Free space / Fiber*	Free space / Fiber*	Free space / Fiber*	Free space / Fiber*
Photodiode Power	0, 1.5 - 5, 5 VR	0, 1.5 - 5, 5 VR	0, 1.5 - 5, 5 VR	0, -1 V
US / Intl.	2,995.00 / 3,500.00	2,995.00 / 3,500.00	2,995.00 / 3,500.00	3,195.00 / 3,750.00
External Power ( PS-15TH )	±15 VDC / 300 mA	±15 VDC / 300 mA	±15 VDC / 300 mA	±15 VDC / 300 mA
Delivery (weeks)	1	1	1	1

 

* FC, SMA, ST available - Additional Cost USD 110.00
** SMA-BNC adapter optional

 

 

 

 

 

 

 

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