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  Balanced Photodetectors, OCT Imaging-Specific Configurations                                       
  [ InGaAs & Si : 2600 - 190 nm, kHz - GHz ]                                                                              

 

   The Dual Balanced Photoreceivers presented here are ideal for minute signal differentiation in heterodyne interferometry, optical coherence tomography - OCT imaging, spatial interferometry and spatial coherence, and optical pulse correlation. The modules are available and configured in : ● Standard,  ● Right Angle (Free-Space),   and   ● Sum-or-Difference ( ± ) Signal   formats, and feature a wide selection of ultra-low noise high-speed photodiodes for optical detection, in a large range of photosensitive areas selected for broad spectral response, covering mid-SWIR to far-UV, operating at high responsivity, and packaged with a coated optical window (or ball lens) to enhance free-space or fiber-coupled optical entry. The photodiodes are mated to amplifiers with ultra-low noise and linear response over the full operating bandwidth, and connected to independent waveguided signal paths. The output impedance is 50-Ω with DC-coupling on most modules, while some advanced models also feature AC / DC signal coupling at the mixed (difference) signal output. The native pre-mixed optical signals are monitored on low-frequency circuits typically with 1 V/mW conversion (or to user specification) and are available independently for experimental source adjustment. [The APD models ( APGnnn and SPAnnn ) do not have this feature and only the difference signal output is available.] The bias voltage of each photodiode is regulated over its working range. The SWIR models have fixed bias at < 1V. All units have connectorized SMA signal outputs which are optimized for low capacitance (~ 1pF), low impedance (50-Ω) instrumentation, data acquisition, and test equipment. The high-speed units specifically require low capacitance semi-rigid cable connections of < 15 cm for full-bandwidth performance. SMA-BNC cables and adapters are optional accessory offerings. M8x3 power entry socket (cable) and LED “ON” indication are standard. The modules are powered by external sources, typically requiring standard ± 15 - 25 VDC @ 300-1000 mA, and regulated to operate all internal components, including the photodiodes and the amplifiers. The PS-15XX Series AC-power supplies are highly recommended - they are specifically designed for full compatibility and seamless integration, having linear regulation, rapid transient response, ultra-low noise stability with noise filters, high CMRR, thermal and overload protection, and reverse-polarity and multi-level ESD / surge protection from the AC input right down to the devices. All units are packaged in small plastic modules for convenient operation. Metric or SAE mounting holes are provided on each module with recommended / user-specified optional hardware epoxied to the case.

 

    We can fully customize the performance of any of our standard modules, where and when adjustments are required for detector area (to 5-mm), bandwidth (above 1 GHz), noise (sub-pW/rt.Hz NEP), gain (to 10 GV/A), geometry, and any other operational factor. Additional configurations are offered which cover a variety of options in photodiode area, multi-level amplification, optical coupling, operating optical power, detector layout and geometry, and operating bandwidth. For example, we offer photodiodes oriented at right angles in the module case (please see options below) to complement our standard in-plane linear configuration. High-grade fully-flexible research platforms and chipsets are available, enabling multiple gain and bandwidth combinations for high-precision (e.g. OCT) measurements. We also offer multi-function [un]balanced photodetector systems for complex optical-beam analysis. We continually update the performance specifications of our modules, presenting new versions and new models specifically tuned for research and laboratory applications. We do offer our modules in bare OEM physical format for easy turnkey integration in end-user optical systems.  

 

 

 

      

    Data and Image credits :

    Picosecond high-speed resolution of pump-probe measurements on ferromagnetic Bi:YIG at 800 and 635 nm
    wavelengths, utilizing the GHz-Series GDP183, high-difference gain, dual-balanced photodetector modules, by
    Dr. Jacopo Albergoni, Max-Planck-Institut für Struktur und Dynamik der Materie, Hamburg, Germany.

    OCT ( Optical Coherence Tomography ) image of human tissue in the SWIR ( 2600 - 1200 nm ) spectrum,
    utilizing the SIR138 ( ultra-high gain, MHz-series)  OCT-Specific dual balanced photodetector modules, by
    Dr. Ernest Chang, Wellman Center for Photomedicine, Harvard Medical School, Massachusetts General Hospital.

 

    SPECIFICATIONS:

MODEL

Type

Spectrum

Area

Speed

Photodiode Gain

Mix Sig. Gain

NEP (pW/rt.Hz)

Responsivity

Dark Current

Coupling *

US / Intl.

SIR004

SWIR InGaAs

2600 - 1200 nm

0.3-mmD

1 kHz

1 G

60X

0.008

1.05 A/W @ 2300 nm

0.5 μA

FS / Fiber

2,250.00 / 2,500.00

SIR012

SWIR InGaAs

2600 - 1200 nm

1-mmD

10 kHz

25 M

45X

0.095

1.05 A/W @ 2300 nm

2 μA

FS / Fiber

2,250.00 / 2,500.00

SIR038

SWIR InGaAs

2600 - 1200 nm

0.3-mmD

60 MHz

5 k

20X

6.5

1.05 A/W @ 2300 nm

0.5 μA

FS / Fiber

2,250.00 / 2,500.00

 

 

 

 

 

 

 

 

 

 

 

 

SIR317

SWIR InGaAs

2600 - 1200 nm

0.3-mmD

60 MHz

2.5, 5, 10k

25, 50, 100X

5.6 (min)

1.05 A/W @ 2300 nm

0.5 μA

FS / Fiber

4,995.00 / 5,495.00

 

 

 

 

 

 

 

 

 

 

 

 

SIR * * *

SWIR InGaAs

2600 - 1200 nm

 

Custom

Custom

Custom

 

1.05 A/W @ 2300 nm

 

FS / Fiber

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Area

Speed

Photodiode Gain

Mix Sig. Gain

NEP (pW/rt.Hz)

Responsivity

Dark Current

Coupling *

US / Intl.

IRN008

NIR InGaAs

1700 - 900 nm

0.5-mmD

1 kHz

1 G

100X

0.007

0.95 A/W @ 1550 nm

0.15 nA

FS / Fiber

2,250.00 / 2,500.00

IRN013

NIR InGaAs

1700 - 900 nm

0.5-mmD

65 MHz

5 k

20X

3.8

0.95 A/W @ 1550 nm

0.15 nA

FS / Fiber

1,950.00 / 2,250.00

IRN025

NIR InGaAs

1700 - 900 nm

0.08-mmD

450 MHz

1.75 k

10X

10

0.95 A/W @ 1550 nm

0.08 nA

FS / Fiber

2,250.00 / 2,500.00

 

 

 

 

 

 

 

 

 

 

 

 

IRN137

NIR InGaAs

1700 - 900 nm

0.08-mmD

300 MHz

2.5, 5, 10 k

15, 30, 50X

5

0.95 A/W @ 1550 nm

0.1 nA

FS / Fiber

3,995.00 / 4,450.00

IRN185

NIR InGaAs

1700 - 900 nm

0.5-mmD

400 kHz

0.001, 0.1, 1 G

10, 50, 100X

0.6 / 0.012 / 0.004

0.95 A/W @ 1550 nm

< 0.025 nA

FS / Fiber

3,995.00 / 4,450.00

 

 

 

 

 

 

 

 

 

 

 

 

IRN381

NIR InGaAs

1700 - 900 nm

2-mmD

40 MHz

10, 25, 50 k

15, 30, 50X

6.5

0.95 A/W @ 1550 nm

2 nA

FS

4,995.00 / 5,550.00

 

 

 

 

 

 

 

 

 

 

 

 

IRN * * *

NIR InGaAs

1700 - 900 nm

Custom

Custom

Custom

Custom

 

0.95 A/W @ 1550 nm

 

FS / Fiber

 

 

 

 

 

 

 

 

 

 

 

 

 

GHz InGaAs

 

 

 

 

 

 

 

 

 

 

 

IGD138

NIR InGaAs

1800 - 800 nm

0.08-mmD

1.5 GHz

40dB

15X (23.5 dB)

8

0.95 A/W @ 1550 nm

0.01 nA

FS / Fiber

3,250.00 / 3,550.00

IGD167

NIR InGaAs

1800 - 800 nm

0.08-mmD

1 GHz

54dB

10X

7

0.95 A/W @ 1550 nm

0.01 nA

FS / Fiber

4,995.00 / 5,500.00

IGD352

NIR InGaAs

1800 - 800 nm

0.08-mmD

< 1 GHz

54dB

20X

7

0.95 A/W @ 1550 nm

0.01 nA

FS / Fiber

5,595.00 / 6,250.00

 

 

 

 

 

 

 

 

 

 

 

 

IGD * * *

NIR InGaAs

1800 - 800 nm

 

Custom

Custom

Custom

 

0.95 A/W @ 1550 nm

 

FS / Fiber

 

 

 

 

 

 

 

 

 

 

 

 

 

APD InGaAs

 

 

 

 

 

 

 

 

 

 

 

APG253

NIR InGaAs

1800 - 800 nm

0.08-mmD

450 MHz

1.75 k  X M10

10X

1

0.95 A/W @ 1550 nm

5 nA

FS / Fiber

5,995.00 / 6,600.00

APG378

NIR InGaAs

1800 - 800 nm

0.08-mmD

1 GHz

54dB  X M10

10X

1

0.95 A/W @ 1550 nm

5 nA

FS / Fiber

6,995.00 / 7,750.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Area

Speed

Photodiode Gain

Mix Sig. Gain

NEP (pW/rt.Hz)

Responsivity

Dark Current

Coupling *

US / Intl.

SDX002

Si (IR-Vis-UV)

1000 - 350 nm

0.75-mmD

1 kHz

1 G

100X

0.007

0.57 A/W @ 800 nm

0.01 nA

FS / Fiber

2,250.00 / 2,500.00

SDX014

Si (IR-Vis-UV)

1000 - 350 nm

0.75-mmD

60 MHz

5 k

20X

4.4

0.57 A/W @ 800 nm

0.01 nA

FS / Fiber

1,950.00 / 2,250.00

SDX073

Si (IR-Vis-UV)

1000 - 350 nm

0.38-mmD

450 MHz

1.75 k

10X

10

0.52 A/W @ 760 nm

0.002 nA

FS / Fiber

1,950.00 / 2,250.00

 

 

 

 

 

 

 

 

 

 

 

 

SDX087

Si (IR-Vis-UV)

1000 - 350 nm

0.1-mmD

325 MHz

2.5, 5, 10 k

15, 30, 50X

5

0.4 A/W @ 700 nm

0.002 nA

FS / Fiber

3,995.00 / 4,450.00

SDX125

Si (IR-Vis-UV)

1000 - 350 nm

1-mmD

730 kHz

0.001, 0.1, 1 G

10, 50, 100X

0.4 / 0.017 / 0.007

0.64 A/W @ 900 nm

< 0.07 nA

FS / Fiber

3,995.00 / 4,450.00

 

 

 

 

 

 

 

 

 

 

 

 

SDX453

Si (IR-Vis-UV)

1000 - 350 nm

3-mmD

100 MHz

3, 10, 25 k

20, 30, 40X

< 10

0.6 A/W @ 840 nm

0.1 nA

FS

3,995.00 / 4,450.00

SDX521

Si (IR-Vis-UV)

1060 - 350 nm

5-mmD

40 MHz

12, 30, 70 k

12.5, 25, 50X

< 4

0.6 A/W @ 920 nm

0.5 nA

FS

3,995.00 / 4,450.00

 

 

 

 

 

 

 

 

 

 

 

 

SDX * * *

Si (IR-Vis-UV)

1000 - 350 nm

 

Custom

Custom

Custom

 

 

 

FS / Fiber

 

 

 

 

 

 

 

 

 

 

 

 

 

GHz Silicon

 

 

 

 

 

 

 

 

 

 

 

GDP034

Si (IR-Vis-UV)

1000 - 350 nm

0.3-mmD

1.5 GHz

40dB

15X (23.5 dB)

8

0.5 A/W @ 650 nm

0.001 nA

FS / Fiber

3,250.00 / 3,550.00

GDP173

Si (IR-Vis-UV)

1000 - 350 nm

0.08-mmD

1 GHz

54dB

10X

7

0.4 A/W @ 750 nm

0.001 nA

FS / Fiber

4,995.00 / 5,500.00

GDP215

Si (IR-Vis-UV)

1000 - 350 nm

0.08-mmD

< 1 GHz

54dB

20X

7

0.4 A/W @ 650 nm

0.001 nA

FS / Fiber

5,595.00 / 6,250.00

 

 

 

 

 

 

 

 

 

 

 

 

GDP * * *

Si (IR-Vis-UV)

1000 - 350 nm

 

Custom

Custom

Custom

 

 

 

FS / Fiber

 

 

 

 

 

 

 

 

 

 

 

 

 

APD Silicon

 

 

 

 

 

 

 

 

 

 

 

SPA137

Si (IR-Vis-UV)

1000 - 350 nm

0.2-mmD

450 MHz

1.75 k  X M50

10X

0.2

0.5 A/W @ 800 nm

0.2 nA

FS / Fiber

4,995.00 / 5,500.00

SPA352

Si (IR-Vis-UV)

1000 - 350 nm

0.2-mmD

1 GHz

54dB X M50

10X

0.2

0.5 A/W @ 800 nm

0.2 nA

FS / Fiber

5,995.00 / 6,600.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Area

Speed

Photodiode Gain

Mix Sig. Gain

NEP (pW/rt.Hz)

Responsivity

Dark Current

Coupling *

US / Intl.

UVM015

UV-Si

1100 - 190 nm

1-mmD

> 17 kHz

100 M

25X

0.02

0.12 A/W @ 190 nm

0.02 nA

FS / Fiber

2,250.00 / 2,500.00

UVM031

UV-Si

1100 - 190 nm

1-mmD

15 MHz

50 k

25X

2.5

0.12 A/W @ 190 nm

0.02 nA

FS / Fiber

2,250.00 / 2,500.00

 

 

 

 

 

 

 

 

 

 

 

 

UVM162

UV-Si

1100 - 190 nm

1-mmD

< 15 MHz

10, 25, 50 k

5, 12.5, 25X

3

0.12 A/W @ 190 nm

0.02 nA

FS / Fiber

3,995.00 / 4,450.00

UVM235

UV-Si

1100 - 190 nm

2.4-mmD

< 400 kHz

1, 10, 100 M

10, 25, 50X

< 1

0.12 A/W @ 190 nm

0.03 nA

FS

3,995.00 / 4,450.00

 

 

 

 

 

 

 

 

 

 

 

 

UVM * * *

UV-Si

1100 - 190 nm

 

Custom

Custom

Custom

 

0.12 A/W @ 190 nm

 

FS / Fiber

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

   NOTE : ALL units are powered by PS-15XX, offered separately

   * FC, SMA, ST available - Additional Cost USD 160.00
   **
SMA-BNC adapter optional

 

 

 

MHz - Balanced Photodetectors with Photodiodes (Large Area) Oriented at Right Angles
[ InGaAs & Si : 2600 - 190 nm
, kHz - MHz ]

   The SRL, IZR, STR, and RUV are balanced photodetector modules with free-space photodiodes oriented at right-angles (photo above), combined with adjustable broadband amplifiers. They feature a selection of ultra-low noise high-speed photodiodes with large photosensitive areas (1 - 3 mm-diameter) with broad spectral ranges, each extending from mid-SWIR (2600 nm) to far-UV (190 nm), operating at high responsivity, and packaged with coated optical windows to enhance free-space optical entry. The photodiodes are coupled to ultra-low noise amplifiers with linear response over the full bandwidth. The output impedance is 50-Ω with DC-coupling. The optical input signals are monitored on low frequency circuits typically with 1 V/mW conversion (or custom user specification). The bias voltage of each photodiode is regulated over the working range. The SWIR models have fixed bias at < 1V. All units have connectorized SMA signal outputs, compatible with low capacitance (~ 1pF), low impedance (50-Ω) instrumentation, data acquisition, and test equipment. SMA-BNC cables and adapters are optional offerings. The detector-amplifiers are packaged in small plastic modules for convenience. M8x3 power entry socket and LED “ON” indication are standard. The modules are powered by external sources, typically requiring standard ± 15 - 25 VDC @ 300-1000 mA, and regulated to operate all internal components, including the photodiodes and the amplifiers. The PS-15XX Series AC-power supplies are highly recommended - they are specifically designed for full compatibility and seamless integration, having linear regulation, rapid transient response, ultra-low noise stability with noise filters, high CMRR, thermal and overload protection, and reverse-polarity and multi-level ESD / surge protection from the AC input to the devices. Metric or SAE mounting holes are provided on each module with recommended / user-specified optional hardware epoxied to the case.

   ALL models can be customized to cover operational requirements in a variety of applications, with adjustments to amplification, 3-dB bandwidth, optical power, photodiode area, and detector layout and geometry.
   

 

SPECIFICATIONS:

MODEL

Type / R. A.

Spectrum

Area

Speed

Photodiode Gain

Mix Sig. Gain

NEP (pW/rt.Hz)

Responsivity

Dark Current

Coupling *

US / Intl.

SRL713

SWIR InGaAs

2600 - 1200 nm

1-mmD

6 MHz

10, 20, 33 k

10, 20, 40 X

< 10

1.05 A/W @ 2300 nm

3 μA

FS only

3,995.00 / 4,450.00

 

 

 

 

 

 

 

 

 

 

 

 

IZR352

NIR InGaAs

1700 - 900 nm

2-mmD

40 MHz

10, 25, 50 k

15, 30, 50 X

< 6.5

0.95 A/W @ 1550 nm

2 nA

FS only

4,995.00 / 5,550.00

 

 

 

 

 

 

 

 

 

 

 

 

STR138

Si (IR-Vis-UV)

1000 - 350 nm

3-mmD

100 MHz

2.5, 5, 10 k

10, 20, 40 X

< 15

0.6 A/W @ 840 nm

0.1 nA

FS only

3,995.00 / 4,450.00

 

 

 

 

 

 

 

 

 

 

 

 

RUV438

UV-Si

1100 - 190 nm

2.4-mmD

1 MHz

100, 500, 1000 k

10, 25, 50 X

< 3

0.12 A/W @ 190 nm

0.03 nA

FS only

3,995.00 / 4,450.00

 


   NOTE : ALL units are powered by PS-15XX, offered separately


    *
SMA-BNC adapters and interface cables are optional

 

 

 

High-Bandwidth Signal Sum / Signal Difference Dual Channel Photodetectors
[ InGaAs & Si : 2600 - 190 nm
, kHz - MHz ]

    The EAX, NAI, VAS, and UAN are high responsivity DUAL photodetector units, which feature precision low noise Si- and InGaAs-based photodiodes, coupled with high-bandwidth 15, 60, 300-MHz sum or difference amplifiers. These detectors are ideal for heterodyne (modulated), or dual pulse photodetection. They feature a selection of ultra-low noise high-speed photodiodes with sub-1-mm photosensitive areas, broad spectral response, and high responsivity with coated optical windows for free-space or fiber coupling. Amplifiers have low noise and linear response over the operating bandwidth. The output impedance is 50-Ω at the mixed (difference / sum) output connector. The optical input signals are monitored on low frequency circuits typically with 1 V/mW conversion (or custom user specification). All sum / difference units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation / test equipment. These high speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is regulated fixed / adjustable over the working range of the photodiode. The SWIR models have max bias at under 1V. They are packaged in small plastic modules for convenient operation. An M8 power entry socket and LED “ON” indication are standard. The PS-15XX Series AC-power supplies are highly recommended - they are specifically designed for full compatibility and seamless integration, having linear regulation, rapid transient response, ultra-low noise stability with noise filters, high CMRR, thermal and overload protection, and reverse-polarity and multi-level ESD / surge protection from the AC input to the devices. Metric or SAE mounting holes are provided on each module with recommended / user-specified optional steel hardware epoxied to the case.

   ALL models can be customized to cover operational requirements in a variety of applications, with adjustments to amplification, 3-dB bandwidth, optical power, photodiode area, and detector layout and geometry.

 

SPECIFICATIONS:

MODEL

Type / [ ± ]

Spectrum

Area

Speed

Photodiode Gain

Mix Sig. Gain

NEP (pW/rt.Hz)

Responsivity

Dark Current

Coupling *

US / Intl.

EAX013

SWIR InGaAs

2600 - 1200 nm

0.3-mmD

60 MHz

2.5, 5, 10 k

± 10 X

> 4

1.05 A/W @ 2300 nm

3 μA

FS only

4,995.00 / 5,550.00

 

 

 

 

 

 

 

 

 

 

 

 

NAI078

NIR InGaAs

1700 - 900 nm

0.08-mmD

300 MHz

2.5, 5, 10 k

± 10 X

< 6

0.95 A/W @ 1550 nm

2 nA

FS only

4,995.00 / 5,550.00

 

 

 

 

 

 

 

 

 

 

 

 

VAS125

Si (IR-Vis-UV)

1000 - 350 nm

0.1-mmD

300 MHz

2.5, 5, 10 k

± 10 X

< 5

0.6 A/W @ 840 nm

0.1 nA

FS only

3,995.00 / 4,450.00

 

 

 

 

 

 

 

 

 

 

 

 

UAN253

UV-Si

1100 - 190 nm

1-mmD

15 MHz

10, 25, 50 k

± 10 X

> 4

0.12 A/W @ 190 nm

0.03 nA

FS only

3,995.00 / 4,450.00

 


   NOTE : ALL units are powered by PS-15XX, offered separately

 

   * FC, SMA, ST available - Additional Cost USD 160.00
   **
SMA-BNC adapter optional

 

 

 

 

 

 

 

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Em dedicacão á Santa Familia de Nazaré - Maria, Nossa Senhora de Fatima, São José, e Senhor JESUS