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AMPLIFIED
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APD
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HIGH-SPEED
◉
ARRAYS
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OEM
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POWER & ACC
Balanced Photodetectors, OCT
Imaging-Specific Configurations
[ InGaAs & Si : 2600 - 190 nm, kHz - GHz ]
The Dual Balanced Photoreceivers presented here are ideal for minute signal differentiation in heterodyne interferometry, optical coherence tomography - OCT imaging, spatial interferometry and spatial coherence, and optical pulse correlation. The modules are available and configured in : ● Standard, ● Right Angle (Free-Space), and ● Sum-or-Difference ( ± ) Signal formats, and feature a wide selection of ultra-low noise high-speed photodiodes for optical detection, in a large range of photosensitive areas selected for broad spectral response, covering mid-SWIR to far-UV, operating at high responsivity, and packaged with a coated optical window (or ball lens) to enhance free-space or fiber-coupled optical entry. The photodiodes are mated to amplifiers with ultra-low noise and linear response over the full operating bandwidth, and connected to independent waveguided signal paths. The output impedance is 50-Ω with DC-coupling on most modules, while some advanced models also feature AC / DC signal coupling at the mixed (difference) signal output. The native pre-mixed optical signals are monitored on low-frequency circuits typically with 1 V/mW conversion (or to user specification) and are available independently for experimental source adjustment. [The APD models ( APGnnn and SPAnnn ) do not have this feature and only the difference signal output is available.] The bias voltage of each photodiode is regulated over its working range. The SWIR models have fixed bias at < 1V. All units have connectorized SMA signal outputs which are optimized for low capacitance (~ 1pF), low impedance (50-Ω) instrumentation, data acquisition, and test equipment. The high-speed units specifically require low capacitance semi-rigid cable connections of < 15 cm for full-bandwidth performance. SMA-BNC cables and adapters are optional accessory offerings. M8x3 power entry socket (cable) and LED “ON” indication are standard. The modules are powered by external sources, typically requiring standard ± 15 - 25 VDC @ 300-1000 mA, and regulated to operate all internal components, including the photodiodes and the amplifiers. The PS-15XX Series AC-power supplies are highly recommended - they are specifically designed for full compatibility and seamless integration, having linear regulation, rapid transient response, ultra-low noise stability with noise filters, high CMRR, thermal and overload protection, and reverse-polarity and multi-level ESD / surge protection from the AC input right down to the devices. All units are packaged in small plastic modules for convenient operation. Metric or SAE mounting holes are provided on each module with recommended / user-specified optional hardware epoxied to the case.
We can fully customize the performance of any of our standard modules, where and when adjustments are required for detector area (to 5-mm), bandwidth (above 1 GHz), noise (sub-pW/rt.Hz NEP), gain (to 10 GV/A), geometry, and any other operational factor. Additional configurations are offered which cover a variety of options in photodiode area, multi-level amplification, optical coupling, operating optical power, detector layout and geometry, and operating bandwidth. For example, we offer photodiodes oriented at right angles in the module case (please see options below) to complement our standard in-plane linear configuration. High-grade fully-flexible research platforms and chipsets are available, enabling multiple gain and bandwidth combinations for high-precision (e.g. OCT) measurements. We also offer multi-function [un]balanced photodetector systems for complex optical-beam analysis. We continually update the performance specifications of our modules, presenting new versions and new models specifically tuned for research and laboratory applications. We do offer our modules in bare OEM physical format for easy turnkey integration in end-user optical systems.
Data and Image credits :
Picosecond high-speed resolution of pump-probe measurements
on ferromagnetic Bi:YIG at 800 and 635 nm
OCT
( Optical Coherence Tomography ) image of human tissue in the SWIR
( 2600 - 1200 nm ) spectrum, SPECIFICATIONS:
wavelengths,
utilizing the
GHz-Series GDP183, high-difference gain, dual-balanced photodetector modules, by
Dr. Jacopo Albergoni,
Max-Planck-Institut
für Struktur und Dynamik der Materie, Hamburg, Germany.
utilizing the
SIR138 ( ultra-high gain, MHz-series) OCT-Specific dual balanced photodetector modules, by
Dr. Ernest Chang,
Wellman Center for Photomedicine, Harvard Medical School, Massachusetts
General Hospital.
MODEL |
Type |
Spectrum |
Area |
Speed |
Photodiode Gain |
Mix Sig. Gain |
NEP (pW/rt.Hz) |
Responsivity |
Dark Current |
Coupling * |
US / Intl. |
SIR004 |
SWIR InGaAs |
2600 - 1200 nm |
0.3-mmD |
1
kHz |
1 G |
60X |
0.008 |
1.05 A/W @ 2300 nm |
0.5 μA |
FS / Fiber |
2,250.00 / 2,500.00 |
SIR012 |
SWIR InGaAs |
2600 - 1200 nm |
1-mmD |
10
kHz |
25 M |
45X |
0.095 |
1.05 A/W @ 2300 nm |
2 μA |
FS / Fiber |
2,250.00 / 2,500.00 |
SIR038 |
SWIR InGaAs |
2600 - 1200 nm |
0.3-mmD |
60
MHz |
5 k |
20X |
6.5 |
1.05 A/W @ 2300 nm |
0.5 μA |
FS / Fiber |
2,250.00 / 2,500.00 |
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SIR317 |
SWIR InGaAs |
2600 - 1200 nm |
0.3-mmD |
≤ 60 MHz |
2.5, 5, 10k |
25, 50, 100X |
5.6 (min) |
1.05 A/W @ 2300 nm |
0.5 μA |
FS / Fiber |
4,995.00 / 5,495.00 |
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SIR * * * |
SWIR InGaAs |
2600 - 1200 nm |
|
Custom |
Custom |
Custom |
|
1.05 A/W @ 2300 nm |
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FS / Fiber |
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MODEL |
Type |
Spectrum |
Area |
Speed |
Photodiode Gain |
Mix Sig. Gain |
NEP (pW/rt.Hz) |
Responsivity |
Dark Current |
Coupling * |
US / Intl. |
IRN008 |
NIR InGaAs |
1700 - 900 nm |
0.5-mmD |
1
kHz |
1 G |
100X |
0.007 |
0.95 A/W @ 1550 nm |
0.15 nA |
FS / Fiber |
2,250.00 / 2,500.00 |
IRN013 |
NIR InGaAs |
1700 - 900 nm |
0.5-mmD |
65
MHz |
5 k |
20X |
3.8 |
0.95 A/W @ 1550 nm |
0.15 nA |
FS / Fiber |
1,950.00 / 2,250.00 |
IRN025 |
NIR InGaAs |
1700 - 900 nm |
0.08-mmD |
450
MHz |
1.75 k |
10X |
10 |
0.95 A/W @ 1550 nm |
0.08 nA |
FS / Fiber |
2,250.00 / 2,500.00 |
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IRN137 |
NIR InGaAs |
1700 - 900 nm |
0.08-mmD |
≤ 300 MHz |
2.5, 5, 10 k |
15, 30, 50X |
≤ 5 |
0.95 A/W @ 1550 nm |
0.1 nA |
FS / Fiber |
3,995.00 / 4,450.00 |
IRN185 |
NIR InGaAs |
1700 - 900 nm |
0.5-mmD |
≤ 400 kHz |
0.001, 0.1, 1 G |
10, 50, 100X |
0.6 / 0.012 / 0.004 |
0.95 A/W @ 1550 nm |
< 0.025 nA |
FS / Fiber |
3,995.00 / 4,450.00 |
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IRN381 |
NIR InGaAs |
1700 - 900 nm |
2-mmD |
≤ 40 MHz |
10, 25, 50 k |
15, 30, 50X |
≤ 6.5 |
0.95 A/W @ 1550 nm |
2 nA |
FS |
4,995.00 / 5,550.00 |
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IRN * * * |
NIR InGaAs |
1700 - 900 nm |
Custom |
Custom |
Custom |
Custom |
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0.95 A/W @ 1550 nm |
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FS / Fiber |
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GHz InGaAs |
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IGD138 |
NIR InGaAs |
1800 - 800 nm |
0.08-mmD |
1.5
GHz |
40dB |
15X (23.5 dB) |
8 |
0.95 A/W @ 1550 nm |
0.01 nA |
FS / Fiber |
3,250.00 / 3,550.00 |
IGD167 |
NIR InGaAs |
1800 - 800 nm |
0.08-mmD |
1
GHz |
54dB |
10X |
7 |
0.95 A/W @ 1550 nm |
0.01 nA |
FS / Fiber |
4,995.00 / 5,500.00 |
IGD352 |
NIR InGaAs |
1800 - 800 nm |
0.08-mmD |
<
1 GHz |
54dB |
20X |
7 |
0.95 A/W @ 1550 nm |
0.01 nA |
FS / Fiber |
5,595.00 / 6,250.00 |
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IGD * * * |
NIR InGaAs |
1800 - 800 nm |
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Custom |
Custom |
Custom |
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0.95 A/W @ 1550 nm |
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FS / Fiber |
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APD InGaAs |
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APG253 |
NIR InGaAs |
1800 - 800 nm |
0.08-mmD |
450
MHz |
1.75 k X M10 |
10X |
1 |
0.95 A/W @ 1550 nm |
5 nA |
FS / Fiber |
5,995.00 / 6,600.00 |
APG378 |
NIR InGaAs |
1800 - 800 nm |
0.08-mmD |
1
GHz |
54dB X M10 |
10X |
1 |
0.95 A/W @ 1550 nm |
5 nA |
FS / Fiber |
6,995.00 / 7,750.00 |
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MODEL |
Type |
Spectrum |
Area |
Speed |
Photodiode Gain |
Mix Sig. Gain |
NEP (pW/rt.Hz) |
Responsivity |
Dark Current |
Coupling * |
US / Intl. |
SDX002 |
Si (IR-Vis-UV) |
1000 - 350 nm |
0.75-mmD |
1
kHz |
1 G |
100X |
0.007 |
0.57 A/W @ 800 nm |
0.01 nA |
FS / Fiber |
2,250.00 / 2,500.00 |
SDX014 |
Si (IR-Vis-UV) |
1000 - 350 nm |
0.75-mmD |
60
MHz |
5 k |
20X |
4.4 |
0.57 A/W @ 800 nm |
0.01 nA |
FS / Fiber |
1,950.00 / 2,250.00 |
SDX073 |
Si (IR-Vis-UV) |
1000 - 350 nm |
0.38-mmD |
450
MHz |
1.75 k |
10X |
10 |
0.52 A/W @ 760 nm |
0.002 nA |
FS / Fiber |
1,950.00 / 2,250.00 |
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SDX087 |
Si (IR-Vis-UV) |
1000 - 350 nm |
0.1-mmD |
≤ 325 MHz |
2.5, 5, 10 k |
15, 30, 50X |
≤ 5 |
0.4 A/W @ 700 nm |
0.002 nA |
FS / Fiber |
3,995.00 / 4,450.00 |
SDX125 |
Si (IR-Vis-UV) |
1000 - 350 nm |
1-mmD |
≤ 730 kHz |
0.001, 0.1, 1 G |
10, 50, 100X |
0.4 / 0.017 / 0.007 |
0.64 A/W @ 900 nm |
< 0.07 nA |
FS / Fiber |
3,995.00 / 4,450.00 |
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SDX453 |
Si (IR-Vis-UV) |
1000 - 350 nm |
3-mmD |
≤ 100 MHz |
3, 10, 25 k |
20, 30, 40X |
< 10 |
0.6 A/W @ 840 nm |
0.1 nA |
FS |
3,995.00 / 4,450.00 |
SDX521 |
Si (IR-Vis-UV) |
1060 - 350 nm |
5-mmD |
≤ 40 MHz |
12, 30, 70 k |
12.5, 25, 50X |
< 4 |
0.6 A/W @ 920 nm |
0.5 nA |
FS |
3,995.00 / 4,450.00 |
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SDX * * * |
Si (IR-Vis-UV) |
1000 - 350 nm |
|
Custom |
Custom |
Custom |
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FS / Fiber |
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GHz Silicon |
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GDP034 |
Si (IR-Vis-UV) |
1000 - 350 nm |
0.3-mmD |
1.5
GHz |
40dB |
15X (23.5 dB) |
8 |
0.5 A/W @ 650 nm |
0.001 nA |
FS / Fiber |
3,250.00 / 3,550.00 |
GDP173 |
Si (IR-Vis-UV) |
1000 - 350 nm |
0.08-mmD |
1
GHz |
54dB |
10X |
7 |
0.4 A/W @ 750 nm |
0.001 nA |
FS / Fiber |
4,995.00 / 5,500.00 |
GDP215 |
Si (IR-Vis-UV) |
1000 - 350 nm |
0.08-mmD |
<
1 GHz |
54dB |
20X |
7 |
0.4 A/W @ 650 nm |
0.001 nA |
FS / Fiber |
5,595.00 / 6,250.00 |
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GDP * * * |
Si (IR-Vis-UV) |
1000 - 350 nm |
|
Custom |
Custom |
Custom |
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FS / Fiber |
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APD Silicon |
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SPA137 |
Si (IR-Vis-UV) |
1000 - 350 nm |
0.2-mmD |
450
MHz |
1.75 k X M50 |
10X |
0.2 |
0.5 A/W @ 800 nm |
0.2 nA |
FS / Fiber |
4,995.00 / 5,500.00 |
SPA352 |
Si (IR-Vis-UV) |
1000 - 350 nm |
0.2-mmD |
1
GHz |
54dB X M50 |
10X |
0.2 |
0.5 A/W @ 800 nm |
0.2 nA |
FS / Fiber |
5,995.00 / 6,600.00 |
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MODEL |
Type |
Spectrum |
Area |
Speed |
Photodiode Gain |
Mix Sig. Gain |
NEP (pW/rt.Hz) |
Responsivity |
Dark Current |
Coupling * |
US / Intl. |
UVM015 |
UV-Si |
1100 - 190 nm |
1-mmD |
>
17 kHz |
100 M |
25X |
0.02 |
0.12 A/W @ 190 nm |
0.02 nA |
FS / Fiber |
2,250.00 / 2,500.00 |
UVM031 |
UV-Si |
1100 - 190 nm |
1-mmD |
15
MHz |
50 k |
25X |
2.5 |
0.12 A/W @ 190 nm |
0.02 nA |
FS / Fiber |
2,250.00 / 2,500.00 |
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UVM162 |
UV-Si |
1100 - 190 nm |
1-mmD |
<
15 MHz |
10, 25, 50 k |
5, 12.5, 25X |
3 |
0.12 A/W @ 190 nm |
0.02 nA |
FS / Fiber |
3,995.00 / 4,450.00 |
UVM235 |
UV-Si |
1100 - 190 nm |
2.4-mmD |
<
400 kHz |
1, 10, 100 M |
10, 25, 50X |
< 1 |
0.12 A/W @ 190 nm |
0.03 nA |
FS |
3,995.00 / 4,450.00 |
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UVM * * * |
UV-Si |
1100 - 190 nm |
|
Custom |
Custom |
Custom |
|
0.12 A/W @ 190 nm |
|
FS / Fiber |
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NOTE : ALL units are powered by PS-15XX, offered separately * FC, SMA, ST available - Additional Cost USD 160.00 MHz - Balanced Photodetectors with Photodiodes (Large Area) Oriented at Right Angles
The SRL, IZR, STR, and RUV are balanced photodetector modules with free-space photodiodes oriented at right-angles (photo above), combined with adjustable broadband amplifiers. They feature a selection of ultra-low noise high-speed photodiodes with large photosensitive areas (1 - 3 mm-diameter) with broad spectral ranges, each extending from mid-SWIR (2600 nm) to far-UV (190 nm), operating at high responsivity, and packaged with coated optical windows to enhance free-space optical entry. The photodiodes are coupled to ultra-low noise amplifiers with linear response over the full bandwidth. The output impedance is 50-Ω with DC-coupling.
The optical input signals are monitored on low frequency circuits typically with 1 V/mW conversion (or custom user specification). The bias voltage of each photodiode is regulated over the working range. The SWIR models have fixed bias at < 1V.
All units have connectorized SMA signal outputs, compatible with low capacitance (~ 1pF), low impedance (50-Ω) instrumentation, data acquisition, and test equipment. SMA-BNC cables and adapters are optional offerings. The detector-amplifiers are packaged in small plastic modules for convenience. M8x3 power entry socket and LED “ON” indication are standard.
The modules are powered by external sources, typically requiring standard
± 15 - 25 VDC @ 300-1000 mA, and regulated to operate all internal components, including the photodiodes and the amplifiers. The
PS-15XX
Series AC-power supplies are highly recommended - they are specifically designed for full compatibility and seamless integration, having linear regulation, rapid transient response, ultra-low noise stability with noise filters, high CMRR, thermal and overload protection, and reverse-polarity and multi-level ESD / surge protection from the AC input to the devices. Metric or SAE mounting holes are provided on each module with recommended / user-specified optional hardware epoxied to the case.
SPECIFICATIONS: MODEL Type / R. A. Spectrum Area Speed Photodiode
Gain Mix Sig.
Gain NEP (pW/rt.Hz) Responsivity Dark Current Coupling * US / Intl. SRL713 SWIR
InGaAs 2600
- 1200 nm 1-mmD ≤ 6 MHz 10, 20, 33 k 10, 20, 40 X <
10 1.05
A/W @ 2300 nm 3
μA FS
only 3,995.00
/ 4,450.00 IZR352 NIR
InGaAs 1700
- 900 nm 2-mmD ≤ 40 MHz 10, 25, 50 k 15, 30, 50 X <
6.5 0.95
A/W @ 1550 nm 2
nA FS
only 4,995.00
/ 5,550.00 STR138 Si
(IR-Vis-UV) 1000
- 350 nm 3-mmD ≤ 100 MHz 2.5, 5, 10 k 10, 20, 40 X <
15 0.6
A/W @ 840 nm 0.1
nA FS
only 3,995.00
/ 4,450.00 RUV438 UV-Si 1100
- 190 nm 2.4-mmD ≤ 1 MHz 100, 500, 1000 k 10, 25, 50 X <
3 0.12
A/W @ 190 nm 0.03
nA FS
only 3,995.00
/ 4,450.00 NOTE : ALL units are powered by PS-15XX, offered separately
High-Bandwidth Signal Sum / Signal Difference Dual Channel Photodetectors
The EAX, NAI, VAS, and UAN are high responsivity DUAL photodetector units, which feature precision low noise Si- and InGaAs-based photodiodes, coupled with high-bandwidth 15, 60, 300-MHz sum or difference amplifiers. These detectors are ideal for heterodyne (modulated), or dual pulse photodetection. They feature a selection of ultra-low noise high-speed photodiodes with sub-1-mm photosensitive areas, broad spectral response, and high responsivity with coated optical windows for free-space or fiber coupling. Amplifiers have low noise and linear response over the operating bandwidth. The output impedance is 50-Ω at the mixed (difference / sum) output connector. The optical input signals are monitored on low frequency circuits typically with 1 V/mW conversion (or custom user specification). All sum / difference units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation / test equipment. These high speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is regulated fixed / adjustable over the working range of the photodiode. The SWIR models have max bias at under 1V. They are packaged in small plastic modules for convenient operation. An M8 power entry socket and LED “ON” indication are standard. The PS-15XX
Series AC-power supplies are highly recommended - they are specifically designed for full compatibility and seamless integration, having linear regulation, rapid transient response, ultra-low noise stability with noise filters, high CMRR, thermal and overload protection, and reverse-polarity and multi-level ESD / surge protection from the AC input to the devices. Metric or SAE mounting holes are provided on each module with recommended / user-specified optional steel hardware epoxied to the case.
SPECIFICATIONS: MODEL Type / [ ± ] Spectrum Area Speed Photodiode
Gain Mix Sig.
Gain NEP (pW/rt.Hz) Responsivity Dark Current Coupling * US / Intl. EAX013 SWIR
InGaAs 2600
- 1200 nm 0.3-mmD ≤ 60 MHz 2.5, 5, 10 k ±
10 X >
4 1.05
A/W @ 2300 nm 3
μA FS
only 4,995.00
/ 5,550.00 NAI078 NIR
InGaAs 1700
- 900 nm 0.08-mmD ≤ 300 MHz 2.5, 5, 10 k ±
10 X <
6 0.95
A/W @ 1550 nm 2
nA FS
only 4,995.00
/ 5,550.00 VAS125 Si
(IR-Vis-UV) 1000
- 350 nm 0.1-mmD ≤ 300 MHz 2.5, 5, 10 k ±
10 X <
5 0.6
A/W @ 840 nm 0.1
nA FS
only 3,995.00
/ 4,450.00 UAN253 UV-Si 1100
- 190 nm 1-mmD 15
MHz 10, 25, 50 k ±
10 X >
4 0.12
A/W @ 190 nm 0.03
nA FS
only 3,995.00
/ 4,450.00 NOTE : ALL units are powered by PS-15XX, offered separately * FC, SMA, ST available - Additional Cost USD 160.00 Copyright © All Rights Reserved
** SMA-BNC adapter
optional
[ InGaAs & Si : 2600 - 190 nm, kHz - MHz ]
ALL models can be customized to cover operational requirements in a variety of applications, with adjustments to amplification, 3-dB bandwidth, optical power, photodiode area, and detector layout and geometry.
* SMA-BNC adapters and interface cables are
optional
[ InGaAs & Si : 2600 - 190 nm, kHz - MHz ]
ALL models can be customized to cover operational requirements in a variety of applications, with adjustments to amplification, 3-dB bandwidth, optical power, photodiode area, and detector layout and geometry.
** SMA-BNC adapter
optional
ALL
material in this website is the exclusive property of ULTRAFAST SENSORS.
Em dedicacão á Santa Familia de Nazaré - Maria, Nossa Senhora de Fatima, São José, e Senhor JESUS