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  Avalanche Photodetectors : Multi-Level Amplification                          
  [ InGaAs & Si : 1800 - 200 nm, MHz - GHz ]                                              

 

   Avalanche photodetectors (APD) are optimal solutions for ultra-low optical power signals, which require a combination of high gain and wide bandwidth. Sensitivities can ideally approach single photon detection in limited temporal windows, where the avalanche operation is synchronized with photon entry, and engaged momentarily above saturation. General applications however, require a combination of low dark current APDs combined with low-noise amplifiers, working in tandem for utilization in laboratory research, medical science, astronomy, and telecommunications. We offer modules which are ideal for low-level CW, heterodyne (modulated), or pulsed photodetection, and which feature a wide selection of ultra-low noise high-speed avalanche photodiodes in a variety of photosensitive areas, broad spectral response, and high responsivity (gain) with coated optical windows. Several options are available, covering gain and bandwidth, making these photodetector products fully customizable for virtually any application. The IPMnnn modules with InGaAs photodiodes can be fiber coupled but the photodiodes must be upgraded to a larger 0.2-mm die at extra cost. The amplifiers are selected for low noise and linear response over the operating bandwidth. The output impedance is 50-Ω with optional AC/DC output-signal coupling at SMA output connectors, and these units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. They are packaged in small plastic cases for convenient operation. A power entry cable and power switch with LED “ON” indication are standard. Metric and/or SAE mounting holes are provided with recommended-optional steel mounting hardware. Caution is advised since high voltages are required and present for APD operation.

 

 

          

 

 

      

 

PLEASE NOTE: Our APD products have internal voltages which can attain 250 VDC.  Extra precaution is absolutely essential to avoid any contact with internal hazardous voltage levels.  These products are NOT TO BE OPERATED WHILE DISASSEMBLED.  We are not responsible or liable in any way for any event or any failure related to high voltage operation of these units.  Plastic hardware can be utilized to mount and hold the module (SAE 8-32 and ISO M4 0.7 threads provided).  Electrical connections (power and signal) should be made and verified prior to connecting and switching power to the module.

 

PLEASE NOTE: The IPMnnn NIR InGaAs modules can be fiber coupled. We do offer an option for larger (0.2-mm) photodiode sizes for more effective coupling. The larger-size photodiodes have higher dark-noise values, and lower bandwidth, and are available at additional cost. Please contact us for details.

 

SPECIFICATIONS:

 

MODEL

Area

Type

Spectrum

Gain (V/A)

M

Speed

NEP (pW/rt.Hz)

Dark Current

Responsivity

Coupling *

Power

US / Intl.

IPM002 *

0.08-mmD

NIR InGaAs

1700 - 1000 nm

1.75 M

< 10

1 MHz

0.009

5 nA

0.95 A/W @ 1550 nm

FS / Fiber

PS-250

3,500.00 / 3,995.00

IPM005

0.2-mmD

NIR InGaAs

1700 - 1000 nm

15 k

< 10

100 MHz

0.45

50 nA

0.95 A/W @ 1550 nm

FS / Fiber

PS-250

2,995.00 / 3,300.00

IPM073

0.08-mmD

NIR InGaAs

1700 - 1000 nm

500

< 10

1 GHz

1.25

5 nA

0.95 A/W @ 1550 nm

FS / Fiber

PS-250

2,995.00 / 3,300.00

Custom

- -

NIR InGaAs

1700 - 1000 nm

- -

< 10

- -

- -

- -

0.95 A/W @ 1550 nm

FS / Fiber

PS-250

Contact

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Area

Type

Spectrum

Gain (V/A)

M

Speed

NEP (pW/rt.Hz)

Dark Current

Responsivity

Coupling *

Power

US / Intl.

APS003

1-mmD

Si

1000 - 400 nm

1.75 M

< 100 (50)

1 MHz

0.0012

0.2 nA

0.5 A/W @ 800 nm

FS / Fiber

PS-250

1,550.00 / 1,700.00

APS008

0.2-mmD

Si

1000 - 400 nm

15 k

< 100 (50)

100 MHz

0.045

0.1 nA

0.5 A/W @ 800 nm

FS / Fiber

PS-250

1,750.00 / 2,000.00

APS048

0.2-mmD

Si

1000 - 400 nm

500

< 100 (50)

< 1 GHz

0.12

0.1 nA

0.5 A/W @ 800 nm

FS / Fiber

PS-250

1,950.00 / 2,200.00

Custom

- -

Si

1000 - 400 nm

- -

< 100 (50)

- -

- -

- -

0.5 A/W @ 800 nm

FS / Fiber

PS-250

Contact

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Area

Type

Spectrum

Gain (V/A)

M

Speed

NEP (pW/rt.Hz)

Dark Current

Responsivity

Coupling *

Power

US / Intl.

DUV052

1-mmD

UV-Si

1000 - 200 nm

1.75 M

< 100 (50)

1 MHz

0.0022

0.3 nA

0.15 A/W @ 250 nm

FS / Fiber

PS-250

1,550.00 / 1,700.00

DUV138

0.2-mmD

UV-Si

1000 - 200 nm

15 k

< 100 (50)

100 MHz

0.045

0.2 nA

0.15 A/W @ 250 nm

FS / Fiber

PS-250

1,750.00 / 2,000.00

DUV468

0.2-mmD

UV-Si

1000 - 200 nm

500

< 100 (50)

< 1 GHz

0.12

0.2 nA

0.15 A/W @ 250 nm

FS / Fiber

PS-250

1,950.00 / 2,200.00

Custom

- -

UV-Si

1000 - 200 nm

- -

< 100 (50)

- -

- -

- -

0.15 A/W @ 250 nm

FS / Fiber

PS-250

Contact

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

* FC, SMA, ST available - Additional Cost USD 80.00
** SMA-BNC adapter optional


* IPMnnn : 0.2-mm NIR InGaAs APD size - Additional Cost USD 1,250.00

 

 

 

 

 

 

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Em dedicacão á Santa Familia de Nazaré - Maria, Nossa Senhora de Fatima, São José, e Senhor JESUS