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These passive photodetector modules are ideal for CW, heterodyne (modulated), or pulsed photodetection. They feature a wide selection of ultra-low noise high-speed photodiodes in a variety of photosensitive areas, broad spectral response, and high responsivity with coated optical windows or ball lens for fiber
coupling. The output impedance is selectable between 50Ω, 1kΩ and “open” on some models, and others feature AC/DC output-signal coupling at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed / regulated-adjustable over the working range of the photodiode. The SWIR models have fixed bias at 1V. They are packaged in small plastic modules for convenient operation. A 3.5-mm power entry socket and power switch with LED “ON” indication are standard. Metric and/or SAE mounting holes are provided with recommended-optional nylon hardware. ESD-proof environment handling are required. All items are non-returnable. SPECIFICATIONS: MODEL Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Coupling * Power US / Intl. SIP003 SWIR
InGaAs 2600 - 1200 nm 5
MHz 1.05
A/W @ 2300 nm 1-mmD 3
μA 1
pW FS
/ Fiber 995.00
/ 1,100.00 SIP007 SWIR
InGaAs [AC/DC] 2600 - 1200 nm 5
MHz 1.05
A/W @ 2300 nm 1-mmD 3
μA 1
pW FS
/ Fiber 1,100.00
/ 1,250.00 SIP014 SWIR
InGaAs 2600 - 1200 nm 60
MHz 1.05
A/W @ 2300 nm 0.3-mmD 0.5
μA 0.5
pW FS
/ Fiber 595.00
/ 675.00 SIP017 SWIR
InGaAs [AC/DC] 2600 - 1200 nm 60
MHz 1.05
A/W @ 2300 nm 0.3-mmD 0.5
μA 0.5
pW FS
/ Fiber 695.00
/ 775.00 MODEL Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Coupling * Power US / Intl. IPD007 NIR
InGaAs 1800 - 800 nm 20
ns 0.95
A/W @ 1550 nm 1-mmD 1
nA 25 FS
/ Fiber 995.00
/ 1,000.00 IPD037 NIR
InGaAs 1800 - 800 nm 1.5
ns 0.95
A/W @ 1550 nm 0.35-mmD 0.1
nA 7 FS
/ Fiber 395.00
/ 450.00 IPD038 NIR
InGaAs [AC/DC] 1800 - 800 nm 1.5
ns 0.95
A/W @ 1550 nm 0.35-mmD 0.1
nA 7 FS
/ Fiber 495.00
/ 550.00 IPD750 NIR
InGaAs 1800 - 800 nm 0.2
ns 0.95
A/W @ 1550 nm 0.08-mmD 0.01
nA 3 FS
/ Fiber 595.00
/ 675.00 IPD753 NIR
InGaAs [AC/DC] 1800 - 800 nm 0.2
ns 0.95
A/W @ 1550 nm 0.08-mmD 0.01
nA 3 FS
/ Fiber 695.00
/ 775.00 MODEL Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Coupling * Power US / Intl. SPD001 Si
(IR-Vis-UV) 1000
- 350 nm 0.1
GHz 0.6
A/W @ 850 nm 3-mmD 0.1
nA 9 FS 750.00
/ 820.00 SPD003 Si
(IR-Vis-UV) 1000 - 350 nm 0.1
GHz 0.65
A/W @ 900 nm 1.1-mmD 0.1
nA 7.5 FS
/ Fiber 450.00
/ 500.00 SPD005 Si
(IR-Vis-UV) 1000 - 350 nm 0.5
GHz 0.6
A/W @ 800 nm 0.75-mmD 0.01
nA 3 FS
/ Fiber 350.00
/ 275.00 SPD012 Si
(IR-Vis-UV) 1000 - 350 nm 0.2
ns 0.5
A/W @ 750 nm 0.3-mmD 0.001
nA 1.2 FS
/ Fiber 395.00
/ 450.00 SPD013 Si
(IR-Vis-UV) / [AC/DC] 1000 - 350 nm 0.2
ns 0.5
A/W @ 750 nm 0.3-mmD 0.001
nA 1.2 FS
/ Fiber 495.00
/ 550.00 SPD137 Si
(IR-Vis-UV) 1000 - 350 nm 0.1
ns 0.4
A/W @ 650 nm 0.08-mmD 0.001
nA 0.5 FS
/ Fiber 895.00
/ 975.00 SPD138 Si
(IR-Vis-UV) / [AC/DC] 1000 - 350 nm 0.1
ns 0.4
A/W @ 650 nm 0.08-mmD 0.001
nA 0.5 FS
/ Fiber 995.00
/ 1,100.00 MODEL Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Coupling * Power US / Intl. UVX003 UV-Si
1100 - 190 nm <
100 ns 0.12
A/W @ 190 nm 1-mmD 0.01
nA 6 FS
/ Fiber 495.00
/ 550.00 UVX007 UV-Si
[AC/DC] 1100 - 190 nm <
100 ns 0.12
A/W @ 190 nm 1-mmD 0.01
nA 6 FS
/ Fiber 595.00
/ 675.00 UVX003 UV-Si
1100 - 190 nm <
200 ns 0.12
A/W @ 190 nm 2.5-mmD 0.03
nA 8 FS 695.00
/ 775.00 UVX007 UV-Si 1100 - 190 nm <
500 ns 0.12
A/W @ 190 nm 3.5-mmD 0.05
nA 10 FS 795.00
/ 880.00 * FC, SMA, ST available - Additional Cost USD 55.00 OEM High-Speed
Photodetectors
These OEM (bare) unamplified modules are ideal for CW, heterodyne (modulated), or pulsed photodetection. They feature a wide selection of ultra-low noise high-speed photodiodes in a variety of photosensitive areas, broad spectral response, and high responsivity with coated optical windows or ball lens for fiber coupling. The output impedance is user specified 50-Ω or 1kΩ at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed to the working level of the photodiode. Units require static-free handling and protection, and ESD-safe tools. All items are non-returnable. SPECIFICATIONS: MODEL Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Coupling * Package ** Power US / Intl. SRX137 SWIR
InGaAs 2600
- 1200 nm 60
MHz 1.05
A/W @ 2300 nm 0.3-mmD 0.5
μA 0.5
pW FS
/ FC Micro-mini 600.00
/ 660.00 SWR251 SWIR
InGaAs 2600
- 1200 nm 60
MHz 1.05
A/W @ 2300 nm 0.3-mmD 0.5
μA 0.5
pW Fiber Rugged
mini 650.00
/ 725.00 MODEL Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Coupling * Package ** Power US / Intl. GIN003 NIR
InGaAs 1800
- 800 nm 1.5
ns 0.95
A/W @ 1550 nm 0.35-mmD 0.1
nA 7 FS
/ FC Micro-mini 500.00
/ 550.00 GIN007 NIR
InGaAs 1800
- 800 nm 0.2
ns 0.95
A/W @ 1550 nm 0.08-mmD 0.01
nA 3 FS
/ FC Micro-mini 650.00
/ 725.00 GDN012 NIR
InGaAs 1800
- 800 nm 1.5
ns 0.95
A/W @ 1550 nm 0.35-mmD 0.1
nA 7 Fiber Rugged
mini 550.00
/ 600.00 GDN018 NIR
InGaAs 1800
- 800 nm 0.2
ns 0.95
A/W @ 1550 nm 0.08-mmD 0.01
nA 3 Fiber Rugged
mini 650.00
/ 725.00 MODEL
Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Coupling * Package ** Power US / Intl. PHS003 Si
(IR-Vis-UV) 1000
- 350 nm 0.2
ns 0.5
A/W @ 750 nm 0.3-mmD 0.001
nA 1.2 FS
/ FC Micro-mini 500.00
/ 550.00 PHS017 Si
(IR-Vis-UV) 1000
- 350 nm 0.1
ns 0.5
A/W @ 650 nm 0.08-mmD 0.001
nA 0.5 FS
/ FC Micro-mini 995.00
/ 1,100.00 PDS014 Si
(IR-Vis-UV) 1000
- 350 nm 0.2
ns 0.5
A/W @ 750 nm 0.3-mmD 0.001
nA 1.2 Fiber Rugged
mini 550.00
/ 600.00 PDS018 Si
(IR-Vis-UV) 1000
- 350 nm 0.1
ns 0.5
A/W @ 650 nm 0.08-mmD 0.001
nA 0.5 Fiber Rugged
mini 995.00
/ 1,100.00 MODEL
Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Coupling * Package ** Power US / Intl. HUV007 UV-Si 1100
- 190 nm <
100 ns 0.12
A/W @ 190 nm 1-mmD 0.01
nA 6 FS Micro-mini 600.00
/ 660.00 UVG008 UV-Si 1100
- 190 nm <
100 ns 0.12
A/W @ 190 nm 1-mmD 0.01
nA 6 Fiber Rugged
mini 650.00
/ 725.00 * FC, SMA, ST available for SWR / GDN / PDS / UVG Models (Rugged
mini) & FC for SRX / GIN / PHS / HUV Models (Micro-mini) - Additional
Cost USD 55.00 MHz
- GHz
Photodetector Signal Voltage Amplifiers [ CALxxx / LSEXXX ]
These ultra-compact
modules are ideal for the amplification of photodetector signals. The amplifiers are selected for low noise and linear response over the operating bandwidth. The input / output impedance is 50-Ω at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. Mounting holes are provided. Modular CAL models are
encased in a plastic enclosure and are signal amplifiers. The LSE models are fully customizable for applications in MIR / LIR detectors requiring a series bias resistor, with adjustable bias voltage from ~0 - 30 V.
MODULE SIGNAL AMP. SPECIFICATIONS: MODEL
Gain (V/A) or dB Bandwidth Input Coupling Max Input (p-p) Output Coupling Package ** Power US / Intl. CAL101 20
dB 1 GHz SMA
(50Ω) 0.1 V DC Module ±15 VDC Reg 1,050.00
/ 1,150.00 CAL108 10
dB 1 GHz SMA
(50Ω) 0.2 V DC Module ±15 VDC Reg 950.00
/ 1,050.00 CAL131 10
(V/V) 600
MHz SMA
(50Ω) 0.5
V DC Module ±15 VDC Reg 750.00
/ 825.00 CAL152 20
(V/V) 200
MHz SMA
(50Ω) 0.25
V DC Module ±15 VDC Reg 750.00
/ 825.00 CAL178 50
(V/V) 60
MHz SMA
(50Ω) 0.1
V DC Module ±15 VDC Reg 750.00
/ 825.00 CAL225 100
(V/V) 150
MHz SMA
(50Ω) 0.05
V DC Module ±15 VDC Reg 950.00
/ 1,050.00 CAL333 1000
(V/V) 75
MHz SMA
(50Ω) 5
mV DC Module ±15 VDC Reg 950.00
/ 1,050.00 LSEXXX Custom (V/V) Custom MHz SMA
(xxΩ) Custom (Adj.) AC
or DC Module ± Custom ** SMA-BNC adapter optional FC / SMA / ST Receptacle - Encased SM / MM Fiber-Coupled Detector Elements
These fiber-coupled photodetector elements ( FC / SMA / ST ) are ideal for integration in end-user designed equipment to facilitate CW, heterodyne (modulated), and optical pulse measurements. They feature a wide selection of ultra-low noise, high-speed, photodiode elements in a variety of photosensitive areas, with broad spectral response, high responsivity, and AR-coated window / ball lens optical power entry. Each unit is
rigorously examined in a
multi-function inspection platform,
and evaluated to meet various typical performance specifications. These units have a compact footprint (see specifications below for all dimensions) with (SAE 2-56) threaded mechanical support for rugged and reliable operation. The mounting hardware is provided together with a screw-on dust cap. All units require electrostatic-free handling, ESD-safe environment, and ESD protection. Solder times should be limited to 1-2 seconds at 300 C at a single stroke. All items are single use only and are non-returnable.
SPECIFICATIONS: MODEL Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Bias Coupling* Power US / Intl. LIR078 SWIR
InGaAs 2600
- 1200 nm 40
ns 1.05
A/W @ 2300 nm 1-mmD 3
μA 1
pW 0.1
V All 600.00
/ 675.00 LIR031 SWIR
InGaAs 2600
- 1200 nm 60
MHz 1.05
A/W @ 2300 nm 0.3-mmD 500
nA 0.5
pW 0.5
V All 450.00
/ 500.00 MODEL
Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Bias Coupling* Power US / Intl. GCR037 NIR
InGaAs 1800
- 800 nm 20
ns 0.95
A/W @ 1550 nm 1-mmD 0.2
nA 25 0.85
V All 750.00
/ 825.00 GCR052 NIR
InGaAs 1800
- 800 nm 1.5
ns 0.95
A/W @ 1550 nm 0.3-mmD 0.15
nA 7 5
V All 450.00
/ 500.00 GCR178 NIR
InGaAs 1800
- 800 nm 0.2
ns 0.95
A/W @ 1550 nm 0.1-mmD 0.1
nA 3 5
V All 525.00
/ 575.00 GCR215 NIR
InGaAs 1800
- 800 nm 35
ps 0.95
A/W @ 1550 nm 0.035
mm 0.01
nA 1.5 5
V
FS/3.5mm(RF) 1,500.00
/ 1,750.00 MODEL
Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Bias Coupling* Power US / Intl. FCX038 Si
(IR-Vis-UV) 1000
- 350 nm 1
ns 0.5
A/W @ 850 nm 0.73-mmD 0.015
nA 3 5
V All 300.00
/ 335.00 FCX052 Si
(IR-Vis-UV) 1000
- 350 nm 0.12
ns 0.5
A/W @ 850 nm 0.3-mmD 0.003
nA 1.2 5
V All 350.00
/ 385.00 FCX073 Si
(IR-Vis-UV) 1000
- 350 nm 0.045
ns 0.5
A/W @ 800 nm 0.075-mmD 0.003
nA 0.5 5
V All 450.00
/ 500.00 FCX125 Si
(IR-Vis-UV) 1000
- 350 nm <
35 ps 0.5
A/W @ 750 nm 0.005
mm 0.01
nA 3 5
V
FS/3.5mm(RF) 1,500.00
/ 1,750.00 MODEL
Type Spectrum Speed Responsivity Area Dark Current NEP (fW/rt.Hz) Bias Coupling* Power US / Intl. FUV003 UV-Si 1100
- 190 nm <
100 ns 0.12
A/W @ 190 nm 1-mmD 0.03
nA 6 0.1
V All 450.00
/ 500.00 * FC, SMA, ST available ( NOTE : APC, LC, SC, etc available with 1-m
adapter cables ) ; Note : FUV - SMA / ST Only MHz
- GHz
Passive & Amplified Photodiode Test Fixtures [ PTFxxx ]
➚ High-Speed Photodetector Modules
➚ Miniature (OEM) High-Speed Photodetectors
➚ Photodetector Signal Amplifier Modules
➚ FC / SMA / ST Fiber-Coupled Detector Elements
➚ Photodiode Comprehensive Test & Evaluation Fixtures
➚ End-Cap Encased Detectors
High-Speed Photodetector Modules
[ InGaAs & Si : 2600 - 190 nm, MHz - GHz ]
** SMA-BNC adapter
optional
[ InGaAs & Si : 2600 - 190 nm, MHz - GHz ]
** SMA-BNC adapter
optional
[ InGaAs & Si : 2600 - 190 nm ]
Photodiode Test Fixture Modules are designed to fully test and evaluate the dynamic and CW performance of any standard Si and InGaAs photodiode in situ. Passive, Amplified RF and CW, and Dual Balanced test fixtures are available individually or integrated to measure the performance of any photodiode packaged with independent cathode and anode leads encased in standard TO packages with case ground. The fixtures are provided with trimpot adjustable regulated bias from ~ 0.015 V to user specified (pre-damage) maximum value (typically 12 V). An in-line current monitor circuit is integrated for direct photodiode current evaluation. An LCD display is provided to monitor various parameters such as photodiode bias, photodiode current, and bi-polar photovoltaic response. The passive high-speed module is configured to evaluate the full bandwidth performance of the photodiode, and features selectable output terminations of 50 Ω, 1k Ω, or "open." The amplified modules are configured for low noise and linear response over operating bandwidth to 1 GHz, with output impedance of 50 Ω. The board features regulated power, reverse polarity protection, ESD protection down to the device level, and a cascade noise filter array. Fiber coupling assembly is optional. An on-board photodiode socket is provided for simple quick insert-test-remove sequence. Typical comprehensive test time is 5 - 30 minutes based on user requirements. RF Test equipment is not supplied. The test fixtures are OEM format and mounting holes are provided for external end user base. External power is required.
PHOTODIODE TEST FIXTURE SPECIFICATIONS:
to e-mail a quote request & provide
your details )
MODEL
|
Function |
Bandwidth |
Output Impedance |
Features |
Output Coupling |
Package ** |
Power |
|
US / Intl. |
PTF010 |
Passive |
PD Spec |
50 / 1k Ω / open |
CW Current Mon. |
DC / AC (opt) |
Module |
±15 VDC Reg |
4,950.00
/ NA |
|
PTF031 |
Amplified |
450
MHz |
50Ω |
Gain = 50 dB |
DC / AC (opt) |
Module |
±15 VDC Reg |
5,950.00
/ NA |
|
PTF038 |
Amplified |
1 GHz |
50Ω |
Gain = 54 dB |
DC / AC (opt) |
Module |
±15 VDC Reg |
6,950.00
/ NA |
|
PTF052 |
Dual Balanced |
450
MHz |
50Ω |
Gain = 50 dB/20 dB |
DC / AC (opt) |
Module |
±15 VDC Reg |
8,950.00
/ NA |
|
PTF078 |
Passive + Amplified |
PD Spec / 450 MHz |
Pass:50/1kΩ, Amp:50Ω |
Integrated |
DC / AC (opt) |
Module |
±15 VDC Reg |
9,950.00
/ NA |
|
PTF137 |
Dual Bal+Amp+Pass |
450
MHz / PD Spec |
50Ω,Pass:50/1kΩ |
Integrated |
DC / AC (opt) |
Module |
±15 VDC Reg |
14,950.00
/ NA |
|
PTFxxx |
Custom [] |
Custom MHz |
SMA
(xxΩ) |
Custom (Adj.) |
AC
or DC |
Module |
± Custom |
|
|
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|
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|
** SMA-BNC adapter optional
End-Cap Encased Detectors
[ InGaAs & Si : 2600 - 190 nm ]
These End-Cap (externally threaded SM05CP2) encased detectors are ideal for CW, heterodyne (modulated), or pulsed measurements. They feature a wide selection of ultra-low noise high-speed unamplified units in a variety of areas, with broad spectral response, and high responsivity, and are equipped with optical windows. The output impedance is user specified 50-Ω or 1kΩ at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed to the working level of the photodiode, and leads for external power are provided. All units require electrostatic-free handling, ESD-safe environment, and ESD protection.
SPECIFICATIONS:
MODEL |
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling |
Package |
Power |
US / Intl. |
LLR137 |
SWIR
InGaAs |
2600
- 1200 nm |
40
ns |
1.05
A/W @ 2300 nm |
1-mmD |
3
μA |
1
pW |
FS |
SM05CP2 |
1,500.00
/ 1,650.00 |
|
LLR251 |
SWIR
InGaAs |
2600
- 1200 nm |
60
MHz |
1.05
A/W @ 2300 nm |
0.3-mmD |
500
nA |
0.5
pW |
FS |
SM05CP2 |
1,350.00
/ 1,500.00 |
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MODEL
|
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling |
Package |
Power |
US / Intl. |
GGC381 |
NIR
InGaAs |
1800
- 800 nm |
20
ns |
0.95
A/W @ 1550 nm |
1-mmD |
0.2
nA |
25 |
FS |
SM05CP2 |
1,500.00
/ 1,650.00 |
|
GGC496 |
NIR
InGaAs |
1800
- 800 nm |
1.5
ns |
0.95
A/W @ 1550 nm |
0.3-mmD |
0.15
nA |
7 |
FS |
SM05CP2 |
1,350.00
/ 1,500.00 |
|
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MODEL
|
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling |
Package |
Power |
US / Intl. |
CCX215 |
Si
(IR-Vis-UV) |
1000
- 350 nm |
1
ns |
0.5
A/W @ 850 nm |
0.73-mmD |
0.015
nA |
3 |
FS |
SM05CP2 |
1,250.00
/ 1,375.00 |
|
CCX371 |
Si
(IR-Vis-UV) |
1000
- 350 nm |
0.12
ns |
0.5
A/W @ 850 nm |
0.3-mmD |
0.003
nA |
1.2 |
FS |
SM05CP2 |
1,350.00
/ 1,500.00 |
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MODEL
|
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling |
Package |
Power |
US / Intl. |
UUV964 |
UV-Si |
1100
- 190 nm |
<
100 ns |
0.12
A/W @ 190 nm |
1-mmD |
0.03
nA |
6 |
FS |
SM05CP2 |
1,350.00
/ 1,500.00 |
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