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High-Speed Photodetector Modules
Miniature (OEM) High-Speed Photodetectors
Photodetector Signal Amplifier Modules
FC / SMA / ST  Fiber-Coupled Detector Elements
Photodiode  Comprehensive Test  &  Evaluation  Fixtures
End-Cap Encased Detectors


High-Speed Photodetector Modules
[ InGaAs & Si
: 2600 - 190 nm, MHz - GHz ]

 

These passive photodetector modules are ideal for CW, heterodyne (modulated), or pulsed photodetection. They feature a wide selection of ultra-low noise high-speed photodiodes in a variety of photosensitive areas, broad spectral response, and high responsivity with coated optical windows or ball lens for fiber coupling. The output impedance is selectable between 50Ω, 1kΩ and “open” on some models, and others feature AC/DC output-signal coupling at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed / regulated-adjustable over the working range of the photodiode. The SWIR models have fixed bias at 1V. They are packaged in small plastic modules for convenient operation. A 3.5-mm power entry socket and power switch with LED “ON” indication are standard. Metric and/or SAE mounting holes are provided with recommended-optional nylon hardware. ESD-proof environment handling are required. All items are non-returnable.

 

 

 

SPECIFICATIONS:

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling *

Power

US / Intl.

SIP003

SWIR InGaAs

2600 - 1200 nm

5 MHz

1.05 A/W @ 2300 nm

1-mmD

3 μA

1 pW

FS / Fiber

995.00 / 1,100.00

SIP007

SWIR InGaAs [AC/DC]

2600 - 1200 nm

5 MHz

1.05 A/W @ 2300 nm

1-mmD

3 μA

1 pW

FS / Fiber

1,100.00 / 1,250.00

SIP014

SWIR InGaAs

2600 - 1200 nm

60 MHz

1.05 A/W @ 2300 nm

0.3-mmD

0.5 μA

0.5 pW

FS / Fiber

595.00 / 675.00

SIP017

SWIR InGaAs [AC/DC]

2600 - 1200 nm

60 MHz

1.05 A/W @ 2300 nm

0.3-mmD

0.5 μA

0.5 pW

FS / Fiber

695.00 / 775.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling *

Power

US / Intl.

IPD007

NIR InGaAs

1800 - 800 nm

20 ns

0.95 A/W @ 1550 nm

1-mmD

1 nA

25

FS / Fiber

995.00 / 1,000.00

IPD037

NIR InGaAs

1800 - 800 nm

1.5 ns

0.95 A/W @ 1550 nm

0.35-mmD

0.1 nA

7

FS / Fiber

395.00 / 450.00

IPD038

NIR InGaAs [AC/DC]

1800 - 800 nm

1.5 ns

0.95 A/W @ 1550 nm

0.35-mmD

0.1 nA

7

FS / Fiber

495.00 / 550.00

IPD750

NIR InGaAs

1800 - 800 nm

0.2 ns

0.95 A/W @ 1550 nm

0.08-mmD

0.01 nA

3

FS / Fiber

595.00 / 675.00

IPD753

NIR InGaAs [AC/DC]

1800 - 800 nm

0.2 ns

0.95 A/W @ 1550 nm

0.08-mmD

0.01 nA

3

FS / Fiber

695.00 / 775.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling *

Power

US / Intl.

SPD001

Si (IR-Vis-UV)

1000 - 350 nm

0.1 GHz

0.6 A/W @ 850 nm

3-mmD

0.1 nA

9

FS

750.00 / 820.00

SPD003

Si (IR-Vis-UV)

1000 - 350 nm

0.1 GHz

0.65 A/W @ 900 nm

1.1-mmD

0.1 nA

7.5

FS / Fiber

450.00 / 500.00

SPD005

Si (IR-Vis-UV)

1000 - 350 nm

0.5 GHz

0.6 A/W @ 800 nm

0.75-mmD

0.01 nA

3

FS / Fiber

350.00 / 275.00

SPD012

Si (IR-Vis-UV)

1000 - 350 nm

0.2 ns

0.5 A/W @ 750 nm

0.3-mmD

0.001 nA

1.2

FS / Fiber

395.00 / 450.00

SPD013

Si (IR-Vis-UV) / [AC/DC]

1000 - 350 nm

0.2 ns

0.5 A/W @ 750 nm

0.3-mmD

0.001 nA

1.2

FS / Fiber

495.00 / 550.00

SPD137

Si (IR-Vis-UV)

1000 - 350 nm

0.1 ns

0.4 A/W @ 650 nm

0.08-mmD

0.001 nA

0.5

FS / Fiber

895.00 / 975.00

SPD138

Si (IR-Vis-UV) / [AC/DC]

1000 - 350 nm

0.1 ns

0.4 A/W @ 650 nm

0.08-mmD

0.001 nA

0.5

FS / Fiber

995.00 / 1,100.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling *

Power

US / Intl.

UVX003

UV-Si

1100 - 190 nm

< 100 ns

0.12 A/W @ 190 nm

1-mmD

0.01 nA

6

FS / Fiber

495.00 / 550.00

UVX007

UV-Si [AC/DC]

1100 - 190 nm

< 100 ns

0.12 A/W @ 190 nm

1-mmD

0.01 nA

6

FS / Fiber

595.00 / 675.00

UVX003

UV-Si

1100 - 190 nm

< 200 ns

0.12 A/W @ 190 nm

2.5-mmD

0.03 nA

8

FS

695.00 / 775.00

UVX007

UV-Si

1100 - 190 nm

< 500 ns

0.12 A/W @ 190 nm

3.5-mmD

0.05 nA

10

FS

795.00 / 880.00

 

 

 

 

 

 

 

 

 

 

 

* FC, SMA, ST available - Additional Cost USD 55.00
**
SMA-BNC adapter optional

 

 

OEM High-Speed Photodetectors
[ InGaAs & Si
: 2600 - 190 nm, MHz - GHz ]

 

These OEM (bare) unamplified modules are ideal for CW, heterodyne (modulated), or pulsed photodetection. They feature a wide selection of ultra-low noise high-speed photodiodes in a variety of photosensitive areas, broad spectral response, and high responsivity with coated optical windows or ball lens for fiber coupling. The output impedance is user specified 50-Ω or 1kΩ at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed to the working level of the photodiode. Units require static-free handling and protection, and ESD-safe tools. All items are non-returnable.

 

 

 

 

 

SPECIFICATIONS:

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling *

Package **

Power

US / Intl.

SRX137

SWIR InGaAs

2600 - 1200 nm

60 MHz

1.05 A/W @ 2300 nm

0.3-mmD

0.5 μA

0.5 pW

FS / FC

Micro-mini

600.00 / 660.00

SWR251

SWIR InGaAs

2600 - 1200 nm

60 MHz

1.05 A/W @ 2300 nm

0.3-mmD

0.5 μA

0.5 pW

Fiber

Rugged mini

650.00 / 725.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling *

Package **

Power

US / Intl.

GIN003

NIR InGaAs

1800 - 800 nm

1.5 ns

0.95 A/W @ 1550 nm

0.35-mmD

0.1 nA

7

FS / FC

Micro-mini

500.00 / 550.00

GIN007

NIR InGaAs

1800 - 800 nm

0.2 ns

0.95 A/W @ 1550 nm

0.08-mmD

0.01 nA

3

FS / FC

Micro-mini

650.00 / 725.00

GDN012

NIR InGaAs

1800 - 800 nm

1.5 ns

0.95 A/W @ 1550 nm

0.35-mmD

0.1 nA

7

Fiber

Rugged mini

550.00 / 600.00

GDN018

NIR InGaAs

1800 - 800 nm

0.2 ns

0.95 A/W @ 1550 nm

0.08-mmD

0.01 nA

3

Fiber

Rugged mini

650.00 / 725.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling *

Package **

Power

US / Intl.

PHS003

Si (IR-Vis-UV)

1000 - 350 nm

0.2 ns

0.5 A/W @ 750 nm

0.3-mmD

0.001 nA

1.2

FS / FC

Micro-mini

500.00 / 550.00

PHS017

Si (IR-Vis-UV)

1000 - 350 nm

0.1 ns

0.5 A/W @ 650 nm

0.08-mmD

0.001 nA

0.5

FS / FC

Micro-mini

995.00 / 1,100.00

PDS014

Si (IR-Vis-UV)

1000 - 350 nm

0.2 ns

0.5 A/W @ 750 nm

0.3-mmD

0.001 nA

1.2

Fiber

Rugged mini

550.00 / 600.00

PDS018

Si (IR-Vis-UV)

1000 - 350 nm

0.1 ns

0.5 A/W @ 650 nm

0.08-mmD

0.001 nA

0.5

Fiber

Rugged mini

995.00 / 1,100.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling *

Package **

Power

US / Intl.

HUV007

UV-Si

1100 - 190 nm

< 100 ns

0.12 A/W @ 190 nm

1-mmD

0.01 nA

6

FS

Micro-mini

600.00 / 660.00

UVG008

UV-Si

1100 - 190 nm

< 100 ns

0.12 A/W @ 190 nm

1-mmD

0.01 nA

6

Fiber

Rugged mini

650.00 / 725.00

 

 

 

 

 

 

 

 

 

 

 

 

* FC, SMA, ST available for SWR / GDN / PDS / UVG Models (Rugged mini)  &  FC for SRX / GIN / PHS / HUV Models (Micro-mini) - Additional Cost USD 55.00
**
SMA-BNC adapter optional

 

 

MHz - GHz  Photodetector Signal Voltage Amplifiers [ CALxxx / LSEXXX ]

 

These ultra-compact modules are ideal for the amplification of photodetector signals. The amplifiers are selected for low noise and linear response over the operating bandwidth. The input / output impedance is 50-Ω at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. Mounting holes are provided. Modular CAL models are encased in a plastic enclosure and are signal amplifiers. The LSE models are fully customizable for applications in MIR / LIR detectors requiring a series bias resistor, with adjustable bias voltage from ~0 - 30 V.

 

 

 

 

 

MODULE  SIGNAL AMP. SPECIFICATIONS:

 

MODEL

Gain (V/A)  or  dB

Bandwidth

Input Coupling

Max Input (p-p)

Output Coupling

Package **

Power

 

US / Intl.

CAL101

20 dB

1 GHz

SMA (50Ω)

0.1 V

DC

Module

±15 VDC Reg

1,050.00 / 1,150.00

CAL108

10 dB

1 GHz

SMA (50Ω)

0.2 V

DC

Module

±15 VDC Reg

950.00 / 1,050.00

 

 

 

 

 

 

 

 

 

 

CAL131

10 (V/V)

600 MHz

SMA (50Ω)

0.5 V

DC

Module

±15 VDC Reg

750.00 / 825.00

CAL152

20 (V/V)

200 MHz

SMA (50Ω)

0.25 V

DC

Module

±15 VDC Reg

750.00 / 825.00

CAL178

50 (V/V)

60 MHz

SMA (50Ω)

0.1 V

DC

Module

±15 VDC Reg

750.00 / 825.00

CAL225

100 (V/V)

150 MHz

SMA (50Ω)

0.05 V

DC

Module

±15 VDC Reg

950.00 / 1,050.00

CAL333

1000 (V/V)

75 MHz

SMA (50Ω)

5 mV

DC

Module

±15 VDC Reg

950.00 / 1,050.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

LSEXXX

Custom (V/V)

Custom MHz

SMA (xxΩ)

Custom (Adj.)

AC or DC

Module

± Custom

 

 

 

 

 

 

 

 

 

 

** SMA-BNC adapter optional

 

 

 

FC / SMA / ST  Receptacle - Encased  SM / MM Fiber-Coupled  Detector Elements
[ InGaAs & Si
: 2600 - 190 nm ]

 

These fiber-coupled photodetector elements ( FC / SMA / ST ) are ideal for integration in end-user designed equipment to facilitate CW, heterodyne (modulated), and optical pulse measurements. They feature a wide selection of ultra-low noise, high-speed, photodiode elements in a variety of photosensitive areas, with broad spectral response, high responsivity, and AR-coated window / ball lens optical power entry. Each unit is rigorously examined in a multi-function inspection platform, and evaluated to meet various typical performance specifications. These units have a compact footprint (see specifications below for all dimensions) with (SAE 2-56) threaded mechanical support for rugged and reliable operation. The mounting hardware is provided together with a screw-on dust cap. All units require electrostatic-free handling, ESD-safe environment, and ESD protection. Solder times should be limited to 1-2 seconds at 300 C at a single stroke. All items are single use only and are non-returnable.

 

 

 

 

 

SPECIFICATIONS:

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Bias

Coupling*

Power

US / Intl.

LIR078

SWIR InGaAs

2600 - 1200 nm

40 ns

1.05 A/W @ 2300 nm

1-mmD

3 μA

1 pW

0.1 V

All

600.00 / 675.00

LIR031

SWIR InGaAs

2600 - 1200 nm

60 MHz

1.05 A/W @ 2300 nm

0.3-mmD

500 nA

0.5 pW

0.5 V

All

450.00 / 500.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Bias

Coupling*

Power

US / Intl.

GCR037

NIR InGaAs

1800 - 800 nm

20 ns

0.95 A/W @ 1550 nm

1-mmD

0.2 nA

25

0.85 V

All

750.00 / 825.00

GCR052

NIR InGaAs

1800 - 800 nm

1.5 ns

0.95 A/W @ 1550 nm

0.3-mmD

0.15 nA

7

5 V

All

450.00 / 500.00

GCR178

NIR InGaAs

1800 - 800 nm

0.2 ns

0.95 A/W @ 1550 nm

0.1-mmD

0.1 nA

3

5 V

All

525.00 / 575.00

GCR215

NIR InGaAs

1800 - 800 nm

35 ps

0.95 A/W @ 1550 nm

0.035 mm

0.01 nA

1.5

5 V

FS/3.5mm(RF)

1,500.00 / 1,750.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Bias

Coupling*

Power

US / Intl.

FCX038

Si (IR-Vis-UV)

1000 - 350 nm

1 ns

0.5 A/W @ 850 nm

0.73-mmD

0.015 nA

3

5 V

All

300.00 / 335.00

FCX052

Si (IR-Vis-UV)

1000 - 350 nm

0.12 ns

0.5 A/W @ 850 nm

0.3-mmD

0.003 nA

1.2

5 V

All

350.00 / 385.00

FCX073

Si (IR-Vis-UV)

1000 - 350 nm

0.045 ns

0.5 A/W @ 800 nm

0.075-mmD

0.003 nA

0.5

5 V

All

450.00 / 500.00

FCX125

Si (IR-Vis-UV)

1000 - 350 nm

< 35 ps

0.5 A/W @ 750 nm

0.005 mm

0.01 nA

3

5 V

FS/3.5mm(RF)

1,500.00 / 1,750.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Bias

Coupling*

Power

US / Intl.

FUV003

UV-Si

1100 - 190 nm

< 100 ns

0.12 A/W @ 190 nm

1-mmD

0.03 nA

6

0.1 V

All

450.00 / 500.00

 

 

 

 

 

 

 

 

 

 

 

 

* FC, SMA, ST available ( NOTE : APC, LC, SC, etc available with 1-m adapter cables ) ; Note : FUV - SMA / ST Only

 

 

MHz - GHz  Passive & Amplified Photodiode Test Fixtures [ PTFxxx ]

[ Compatible with all InGaAs & Si : 2600 - 190 nm ]

 

Photodiode Test Fixture Modules are designed to fully test and evaluate the dynamic and CW performance of any standard Si and InGaAs photodiode in situ. Passive, Amplified RF and CW, and Dual Balanced test fixtures are available individually or integrated to measure the performance of any photodiode packaged with independent cathode and anode leads encased in standard TO packages with case ground. The fixtures are provided with trimpot adjustable regulated bias from ~ 0.015 V to user specified (pre-damage) maximum value (typically 12 V). An in-line current monitor circuit is integrated for direct photodiode current evaluation. An LCD display is provided to monitor various parameters such as photodiode bias, photodiode current, and bi-polar photovoltaic response. The passive high-speed module is configured to evaluate the full bandwidth performance of the photodiode, and features selectable output terminations of 50 Ω, 1k Ω, or "open." The amplified modules are configured for low noise and linear response over operating bandwidth to 1 GHz, with output impedance of 50 Ω. The board features regulated power, reverse polarity protection, ESD protection down to the device level, and a cascade noise filter array. Fiber coupling assembly is optional. An on-board photodiode socket is provided for simple quick insert-test-remove sequence. Typical comprehensive test time is 5 - 30 minutes based on user requirements. RF Test equipment is not supplied. The test fixtures are OEM format and mounting holes are provided for external end user base. External power is required.

 

 

PHOTODIODE TEST FIXTURE SPECIFICATIONS:  to e-mail a quote request & provide your details )

 

MODEL

Function   

Bandwidth

Output Impedance

Features

Output Coupling

Package **

Power

 

US / Intl.

PTF010

Passive

PD Spec

50 / 1k Ω / open

CW Current Mon.

DC / AC (opt)

Module

±15 VDC Reg

4,950.00 / NA

PTF031

Amplified

450 MHz

50Ω

Gain = 50 dB

DC / AC (opt)

Module

±15 VDC Reg

5,950.00 / NA

PTF038

Amplified

1 GHz

50Ω

Gain = 54 dB

DC / AC (opt)

Module

±15 VDC Reg

6,950.00 / NA

PTF052

Dual Balanced

450 MHz

50Ω

Gain = 50 dB/20 dB

DC / AC (opt)

Module

±15 VDC Reg

8,950.00 / NA

PTF078

Passive + Amplified

PD Spec / 450 MHz

Pass:50/1kΩ, Amp:50Ω

Integrated

DC / AC (opt)

Module

±15 VDC Reg

9,950.00 / NA

PTF137

Dual Bal+Amp+Pass

450 MHz / PD Spec

50Ω,Pass:50/1kΩ

Integrated

DC / AC (opt)

Module

±15 VDC Reg

14,950.00 / NA

PTFxxx

Custom []

Custom MHz

SMA (xxΩ)

Custom (Adj.)

AC or DC

Module

± Custom

 

 

 

 

 

 

 

 

 

 

** SMA-BNC adapter optional

 

 

End-Cap Encased  Detectors
[ InGaAs & Si
: 2600 - 190 nm ]

 

These End-Cap (externally threaded SM05CP2) encased detectors are ideal for CW, heterodyne (modulated), or pulsed measurements. They feature a wide selection of ultra-low noise high-speed unamplified units in a variety of areas, with broad spectral response, and high responsivity, and are equipped with optical windows. The output impedance is user specified 50-Ω or 1kΩ at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed to the working level of the photodiode, and leads for external power are provided. All units require electrostatic-free handling, ESD-safe environment, and ESD protection.

 

 

 

 

 

SPECIFICATIONS:

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling

Package

Power

US / Intl.

LLR137

SWIR InGaAs

2600 - 1200 nm

40 ns

1.05 A/W @ 2300 nm

1-mmD

3 μA

1 pW

FS

SM05CP2

1,500.00 / 1,650.00

LLR251

SWIR InGaAs

2600 - 1200 nm

60 MHz

1.05 A/W @ 2300 nm

0.3-mmD

500 nA

0.5 pW

FS

SM05CP2

1,350.00 / 1,500.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling

Package

Power

US / Intl.

GGC381

NIR InGaAs

1800 - 800 nm

20 ns

0.95 A/W @ 1550 nm

1-mmD

0.2 nA

25

FS

SM05CP2

1,500.00 / 1,650.00

GGC496

NIR InGaAs

1800 - 800 nm

1.5 ns

0.95 A/W @ 1550 nm

0.3-mmD

0.15 nA

7

FS

SM05CP2

1,350.00 / 1,500.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling

Package

Power

US / Intl.

CCX215

Si (IR-Vis-UV)

1000 - 350 nm

1 ns

0.5 A/W @ 850 nm

0.73-mmD

0.015 nA

3

FS

SM05CP2

1,250.00 / 1,375.00

CCX371

Si (IR-Vis-UV)

1000 - 350 nm

0.12 ns

0.5 A/W @ 850 nm

0.3-mmD

0.003 nA

1.2

FS

SM05CP2

1,350.00 / 1,500.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Coupling

Package

Power

US / Intl.

UUV964

UV-Si

1100 - 190 nm

< 100 ns

0.12 A/W @ 190 nm

1-mmD

0.03 nA

6

FS

SM05CP2

1,350.00 / 1,500.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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