HOME : UltrafastSensors.com
📩
Connect with Ultrafast Sensors & Applications
◉
OCT - DUALS
◉
AMPLIFIED
◉
APD
◉
ARRAYS
◉
OEM
◉
POWER & ACC
High-Speed Photodetectors : Passive Modules & Components.
[ InGaAs & Si : 2600 - 190 nm, kHz - GHz ]
High-Speed Photodetector (Passive) Modules
➚ High-Speed Photodetector (Passive) Modules
➚ FC / SMA / ST Fiber-Coupled Detector Elements
➚ Photodiode C T & E Fixtures
➚ End-Cap Encased Detectors
[ InGaAs & Si : 2600 - 190 nm, MHz - GHz ]
These passive photodetector modules are ideal for CW, heterodyne (modulated), or pulsed photodetection. They feature a wide selection of ultra-low noise high-speed photodiodes in a variety of photosensitive areas, broad spectral response, and high responsivity with coated optical windows or ball lens for fiber coupling. The output impedance is selectable between 50Ω, 1kΩ and “open” on some models, and others feature AC/DC output-signal coupling at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed / regulated-adjustable over the working range of the photodiode. The SWIR models have fixed bias at 1V. They are packaged in small plastic modules for convenient operation. A 3.5-mm power entry socket and power switch with LED “ON” indication are standard. Metric and/or SAE mounting holes are provided with recommended-optional nylon hardware. ESD-proof environment handling are required. All items are non-returnable.
SPECIFICATIONS:
MODEL |
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling * |
Power |
US / Intl. |
SIP003 |
SWIR
InGaAs |
2600 - 1200 nm |
5
MHz |
1.05
A/W @ 2300 nm |
1-mmD |
3
μA |
1
pW |
FS
/ Fiber |
995.00
/ 1,100.00 |
|
SIP007 |
SWIR
InGaAs [AC/DC] |
2600 - 1200 nm |
5
MHz |
1.05
A/W @ 2300 nm |
1-mmD |
3
μA |
1
pW |
FS
/ Fiber |
1,100.00
/ 1,250.00 |
|
SIP014 |
SWIR
InGaAs |
2600 - 1200 nm |
60
MHz |
1.05
A/W @ 2300 nm |
0.3-mmD |
0.5
μA |
0.5
pW |
FS
/ Fiber |
595.00
/ 675.00 |
|
SIP017 |
SWIR
InGaAs [AC/DC] |
2600 - 1200 nm |
60
MHz |
1.05
A/W @ 2300 nm |
0.3-mmD |
0.5
μA |
0.5
pW |
FS
/ Fiber |
695.00
/ 775.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MODEL |
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling * |
Power |
US / Intl. |
IPD007 |
NIR
InGaAs |
1800 - 800 nm |
20
ns |
0.95
A/W @ 1550 nm |
1-mmD |
1
nA |
25 |
FS
/ Fiber |
995.00
/ 1,000.00 |
|
IPD037 |
NIR
InGaAs |
1800 - 800 nm |
1.5
ns |
0.95
A/W @ 1550 nm |
0.35-mmD |
0.1
nA |
7 |
FS
/ Fiber |
395.00
/ 450.00 |
|
IPD038 |
NIR
InGaAs [AC/DC] |
1800 - 800 nm |
1.5
ns |
0.95
A/W @ 1550 nm |
0.35-mmD |
0.1
nA |
7 |
FS
/ Fiber |
495.00
/ 550.00 |
|
IPD750 |
NIR
InGaAs |
1800 - 800 nm |
0.2
ns |
0.95
A/W @ 1550 nm |
0.08-mmD |
0.01
nA |
3 |
FS
/ Fiber |
595.00
/ 675.00 |
|
IPD753 |
NIR
InGaAs [AC/DC] |
1800 - 800 nm |
0.2
ns |
0.95
A/W @ 1550 nm |
0.08-mmD |
0.01
nA |
3 |
FS
/ Fiber |
695.00
/ 775.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MODEL |
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling * |
Power |
US / Intl. |
SPD001 |
Si
(IR-Vis-UV) |
1000
- 350 nm |
0.1
GHz |
0.6
A/W @ 850 nm |
3-mmD |
0.1
nA |
9 |
FS |
750.00
/ 820.00 |
|
SPD003 |
Si
(IR-Vis-UV) |
1000 - 350 nm |
0.1
GHz |
0.65
A/W @ 900 nm |
1.1-mmD |
0.1
nA |
7.5 |
FS
/ Fiber |
450.00
/ 500.00 |
|
SPD005 |
Si
(IR-Vis-UV) |
1000 - 350 nm |
0.5
GHz |
0.6
A/W @ 800 nm |
0.75-mmD |
0.01
nA |
3 |
FS
/ Fiber |
350.00
/ 275.00 |
|
SPD012 |
Si
(IR-Vis-UV) |
1000 - 350 nm |
0.2
ns |
0.5
A/W @ 750 nm |
0.3-mmD |
0.001
nA |
1.2 |
FS
/ Fiber |
395.00
/ 450.00 |
|
SPD013 |
Si
(IR-Vis-UV) / [AC/DC] |
1000 - 350 nm |
0.2
ns |
0.5
A/W @ 750 nm |
0.3-mmD |
0.001
nA |
1.2 |
FS
/ Fiber |
495.00
/ 550.00 |
|
SPD137 |
Si
(IR-Vis-UV) |
1000 - 350 nm |
0.1
ns |
0.4
A/W @ 650 nm |
0.08-mmD |
0.001
nA |
0.5 |
FS
/ Fiber |
895.00
/ 975.00 |
|
SPD138 |
Si
(IR-Vis-UV) / [AC/DC] |
1000 - 350 nm |
0.1
ns |
0.4
A/W @ 650 nm |
0.08-mmD |
0.001
nA |
0.5 |
FS
/ Fiber |
995.00
/ 1,100.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MODEL |
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling * |
Power |
US / Intl. |
UVX003 |
UV-Si
|
1100 - 190 nm |
<
100 ns |
0.12
A/W @ 190 nm |
1-mmD |
0.01
nA |
6 |
FS
/ Fiber |
495.00
/ 550.00 |
|
UVX007 |
UV-Si
[AC/DC] |
1100 - 190 nm |
<
100 ns |
0.12
A/W @ 190 nm |
1-mmD |
0.01
nA |
6 |
FS
/ Fiber |
595.00
/ 675.00 |
|
UVX003 |
UV-Si
|
1100 - 190 nm |
<
200 ns |
0.12
A/W @ 190 nm |
2.5-mmD |
0.03
nA |
8 |
FS |
695.00
/ 775.00 |
|
UVX007 |
UV-Si |
1100 - 190 nm |
<
500 ns |
0.12
A/W @ 190 nm |
3.5-mmD |
0.05
nA |
10 |
FS |
795.00
/ 880.00 |
|
|
|
|
|
|
|
|
|
|
|
|
* FC, SMA, ST available - Additional Cost USD 80.00
** SMA-BNC adapter
optional
FC / SMA / ST Receptacle - Encased SM / MM Fiber-Coupled Detector Elements
[ InGaAs & Si : 2600 - 190 nm ]
These fiber-coupled photodetector elements ( FC / SMA / ST ) are ideal for integration in end-user designed equipment to facilitate CW, heterodyne (modulated), and optical pulse measurements. They feature a wide selection of ultra-low noise, high-speed, photodiode elements in a variety of photosensitive areas, with broad spectral response, high responsivity, and AR-coated window / ball lens optical power entry. Each unit is rigorously examined in a multi-function inspection platform, and evaluated to meet various typical performance specifications. These units have a compact footprint (see specifications below for all dimensions) with (SAE 2-56) threaded mechanical support for rugged and reliable operation. The mounting hardware is provided together with a screw-on dust cap. All units require electrostatic-free handling, ESD-safe environment, and ESD protection. Solder times should be limited to 1-2 seconds at 300 C at a single stroke. All items are single use only and are non-returnable.
SPECIFICATIONS:
MODEL |
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Bias |
Coupling* |
Power |
US / Intl. |
LIR078 |
SWIR
InGaAs |
2600
- 1200 nm |
40
ns |
1.05
A/W @ 2300 nm |
1-mmD |
3
μA |
1
pW |
0.1
V |
All |
600.00
/ 675.00 |
|
LIR031 |
SWIR
InGaAs |
2600
- 1200 nm |
60
MHz |
1.05
A/W @ 2300 nm |
0.3-mmD |
500
nA |
0.5
pW |
0.5
V |
All |
450.00
/ 500.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MODEL
|
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Bias |
Coupling* |
Power |
US / Intl. |
GCR037 |
NIR
InGaAs |
1800
- 800 nm |
20
ns |
0.95
A/W @ 1550 nm |
1-mmD |
0.2
nA |
25 |
0.85
V |
All |
750.00
/ 825.00 |
|
GCR052 |
NIR
InGaAs |
1800
- 800 nm |
1.5
ns |
0.95
A/W @ 1550 nm |
0.3-mmD |
0.15
nA |
7 |
5
V |
All |
450.00
/ 500.00 |
|
GCR178 |
NIR
InGaAs |
1800
- 800 nm |
0.2
ns |
0.95
A/W @ 1550 nm |
0.1-mmD |
0.1
nA |
3 |
5
V |
All |
525.00
/ 575.00 |
|
GCR215 |
NIR
InGaAs |
1800
- 800 nm |
35
ps |
0.95
A/W @ 1550 nm |
0.035
mm |
0.01
nA |
1.5 |
5
V |
FS/3.5mm(RF) |
1,500.00
/ 1,750.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MODEL
|
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Bias |
Coupling* |
Power |
US / Intl. |
FCX038 |
Si
(IR-Vis-UV) |
1000
- 350 nm |
1
ns |
0.5
A/W @ 850 nm |
0.73-mmD |
0.015
nA |
3 |
5
V |
All |
300.00
/ 335.00 |
|
FCX052 |
Si
(IR-Vis-UV) |
1000
- 350 nm |
0.12
ns |
0.5
A/W @ 850 nm |
0.3-mmD |
0.003
nA |
1.2 |
5
V |
All |
350.00
/ 385.00 |
|
FCX073 |
Si
(IR-Vis-UV) |
1000
- 350 nm |
0.045
ns |
0.5
A/W @ 800 nm |
0.075-mmD |
0.003
nA |
0.5 |
5
V |
All |
450.00
/ 500.00 |
|
FCX125 |
Si
(IR-Vis-UV) |
1000
- 350 nm |
<
35 ps |
0.5
A/W @ 750 nm |
0.005
mm |
0.01
nA |
3 |
5
V |
FS/3.5mm(RF) |
1,500.00
/ 1,750.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MODEL
|
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Bias |
Coupling* |
Power |
US / Intl. |
FUV003 |
UV-Si |
1100
- 190 nm |
<
100 ns |
0.12
A/W @ 190 nm |
1-mmD |
0.03
nA |
6 |
0.1
V |
All |
450.00
/ 500.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
* FC, SMA, ST available ( NOTE : APC, LC, SC, etc available with 1-m
adapter cables ) ; Note : FUV - SMA / ST Only
MHz
- GHz
Passive & Amplified Photodiode Test Fixtures [ PTFxxx ]
Photodiode Test Fixture Modules are designed to fully test and evaluate the dynamic and CW performance of any standard Si and InGaAs photodiode in situ. Passive, Amplified RF and CW, and Dual Balanced test fixtures are available individually or integrated to measure the performance of any photodiode packaged with independent cathode and anode leads encased in standard TO packages with case ground. The fixtures are provided with trimpot adjustable regulated bias from ~ 0.015 V to user specified (pre-damage) maximum value (typically 12 V). An in-line current monitor circuit is integrated for direct photodiode current evaluation. An LCD display is provided to monitor various parameters such as photodiode bias, photodiode current, and bi-polar photovoltaic response. The passive high-speed module is configured to evaluate the full bandwidth performance of the photodiode, and features selectable output terminations of 50 Ω, 1k Ω, or "open." The amplified modules are configured for low noise and linear response over operating bandwidth to 1 GHz, with output impedance of 50 Ω. The board features regulated power, reverse polarity protection, ESD protection down to the device level, and a cascade noise filter array. Fiber coupling assembly is optional. An on-board photodiode socket is provided for simple quick insert-test-remove sequence. Typical comprehensive test time is 5 - 30 minutes based on user requirements. RF Test equipment is not supplied. The test fixtures are OEM format and mounting holes are provided for external end user base. External power is required.
PHOTODIODE TEST FIXTURE SPECIFICATIONS:
to e-mail a quote request & provide
your details )
MODEL
|
Function |
Bandwidth |
Output Impedance |
Features |
Output Coupling |
Package ** |
Power |
|
US / Intl. |
PTF010 |
Passive |
PD Spec |
50 / 1k Ω / open |
CW Current Mon. |
DC / AC (opt) |
Module |
±15 VDC Reg |
14,950.00
/ NA |
|
PTF031 |
Amplified |
450
MHz |
50Ω |
Gain = 50 dB |
DC / AC (opt) |
Module |
±15 VDC Reg |
15,950.00
/ NA |
|
PTF038 |
Amplified |
1 GHz |
50Ω |
Gain = 54 dB |
DC / AC (opt) |
Module |
±15 VDC Reg |
16,950.00
/ NA |
|
PTF052 |
Dual Balanced |
450
MHz |
50Ω |
Gain = 50 dB/20 dB |
DC / AC (opt) |
Module |
±15 VDC Reg |
18,950.00
/ NA |
|
PTF078 |
Passive + Amplified |
PD Spec / 450 MHz |
Pass:50/1kΩ, Amp:50Ω |
Integrated |
DC / AC (opt) |
Module |
±15 VDC Reg |
19,950.00
/ NA |
|
PTF137 |
Dual Bal+Amp+Pass |
450
MHz / PD Spec |
50Ω,Pass:50/1kΩ |
Integrated |
DC / AC (opt) |
Module |
±15 VDC Reg |
24,950.00
/ NA |
|
PTFxxx |
Custom [] |
Custom MHz |
SMA
(xxΩ) |
Custom (Adj.) |
AC
or DC |
Module |
± Custom |
|
|
|
|
|
|
|
|
|
|
|
|
** SMA-BNC adapter optional
End-Cap Encased Detectors
[ InGaAs & Si : 2600 - 190 nm ]
These End-Cap (externally threaded SM05CP2) encased detectors are ideal for CW, heterodyne (modulated), or pulsed measurements. They feature a wide selection of ultra-low noise high-speed unamplified units in a variety of areas, with broad spectral response, and high responsivity, and are equipped with optical windows. The output impedance is user specified 50-Ω or 1kΩ at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed to the working level of the photodiode, and leads for external power are provided. All units require electrostatic-free handling, ESD-safe environment, and ESD protection.
SPECIFICATIONS:
MODEL |
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling |
Package |
Power |
US / Intl. |
LLR137 |
SWIR
InGaAs |
2600
- 1200 nm |
40
ns |
1.05
A/W @ 2300 nm |
1-mmD |
3
μA |
1
pW |
FS |
SM05CP2 |
1,500.00
/ 1,650.00 |
|
LLR251 |
SWIR
InGaAs |
2600
- 1200 nm |
60
MHz |
1.05
A/W @ 2300 nm |
0.3-mmD |
500
nA |
0.5
pW |
FS |
SM05CP2 |
1,350.00
/ 1,500.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MODEL
|
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling |
Package |
Power |
US / Intl. |
GGC381 |
NIR
InGaAs |
1800
- 800 nm |
20
ns |
0.95
A/W @ 1550 nm |
1-mmD |
0.2
nA |
25 |
FS |
SM05CP2 |
1,500.00
/ 1,650.00 |
|
GGC496 |
NIR
InGaAs |
1800
- 800 nm |
1.5
ns |
0.95
A/W @ 1550 nm |
0.3-mmD |
0.15
nA |
7 |
FS |
SM05CP2 |
1,350.00
/ 1,500.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MODEL
|
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling |
Package |
Power |
US / Intl. |
CCX215 |
Si
(IR-Vis-UV) |
1000
- 350 nm |
1
ns |
0.5
A/W @ 850 nm |
0.73-mmD |
0.015
nA |
3 |
FS |
SM05CP2 |
1,250.00
/ 1,375.00 |
|
CCX371 |
Si
(IR-Vis-UV) |
1000
- 350 nm |
0.12
ns |
0.5
A/W @ 850 nm |
0.3-mmD |
0.003
nA |
1.2 |
FS |
SM05CP2 |
|
1,350.00
/ 1,500.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MODEL
|
Type |
Spectrum |
Speed |
Responsivity |
Area |
Dark Current |
NEP (fW/rt.Hz) |
Coupling |
Package |
Power |
US / Intl. |
UUV964 |
UV-Si |
1100
- 190 nm |
<
100 ns |
0.12
A/W @ 190 nm |
1-mmD |
0.03
nA |
6 |
FS |
SM05CP2 |
1,350.00
/ 1,500.00 |
|
|
|
|
|
|
|
|
|
|
|
|
|
Copyright © All Rights Reserved. Ultrafast
Sensors. ALL
material in this website is the exclusive property of ULTRAFAST SENSORS. Em dedicacão á Santa Familia de Nazaré - Maria, Nossa Senhora de Fatima, São José, e Senhor JESUS