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➚ High-Speed Photodetector Modules
➚ Miniature (OEM) High-Speed Photodetectors
➚ Photodetector Signal Amplifier Modules
➚ FC / SMA / ST  Fiber-Coupled Detector Elements
➚ Photodiode  Comprehensive Test  &  Evaluation  Fixtures
➚ End-Cap Encased Detectors


High-Speed Photodetector Modules
[ InGaAs & Si : 2600 - 190 nm, MHz - GHz ]

 

These passive photodetector modules are ideal for CW, heterodyne (modulated), or pulsed photodetection. They feature a wide selection of ultra-low noise high-speed photodiodes in a variety of photosensitive areas, broad spectral response, and high responsivity with coated optical windows or ball lens for fiber coupling. The output impedance is selectable between 50Ω, 1kΩ and “open” on some models, and others feature AC/DC output-signal coupling at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed / regulated-adjustable over the working range of the photodiode. The SWIR models have fixed bias at 1V. They are packaged in small plastic modules for convenient operation. A 3.5-mm power entry socket and power switch with LED “ON” indication are standard. Metric and/or SAE mounting holes are provided with recommended-optional nylon hardware. ESD-proof environment handling are required. All items are non-returnable.

 

• 5000 - 2000 nm [MWIR] ; 2600 - 1200 nm [SWIR] ; 1800 - 800 nm [NIR] ; 1000 - 350 nm [IR-Vis-UV] ; 1100 - 190 nm [UV]
• Free Space and Fiber Coupled ( FC - UPC, FC - APC, SMA, ST )
• Photosensing areas : 0.1-mm diameter to 3.5-mm diameter
• Bandwidth : Hz - GHz PS-15D with AC / DC coupling option (some models)
• Noise : 1 fW / rt. Hz - < 1 pW / rt. Hz
• Responsivity :  SWIR : 1.1 A/W @ 2300 nm , NIR : 1 A/W @ 1550 nm , Vis : 0.5 A/W @ 800 nm , UV : 0.12 A/W @ 190 nm
• Multi - 10 mW level maximum operating power
• Regulated adjustable power (0 / 1.5 - 12VDC)  (some models) for low noise and high stability over wide operating ranges
• 50Ω / 1kΩ / “Open”  selectable output impedance with SMA RF signal output and BNC-adapter optional
• Modular Package [ External Power ]
• Module dimensions : 60 mm x 47 mm x 24 mm ( 2.4 in x 1.85 in x 0.95 in) with 4X mounting holes centered on 25-mm (1-in) square grid
• SAE 8-32 or  ISO M4 (all plastic) hardware compatibility
• Customized Models Available ( Wavelength, Detector Area, Bandwidth, Power / Amplification, etc. )
• ESD Sensitive - ESD Handling  / Tools Required
• Matched pair components available

 

 

SPECIFICATIONS:

 

MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling *	Power	US / Intl.
SIP003	SWIR InGaAs	2600 - 1200 nm	5 MHz	1.05 A/W @ 2300 nm	1-mmD	3 μA	1 pW	FS / Fiber		995.00 / 1,100.00
SIP007	SWIR InGaAs [AC/DC]	2600 - 1200 nm	5 MHz	1.05 A/W @ 2300 nm	1-mmD	3 μA	1 pW	FS / Fiber		1,100.00 / 1,250.00
SIP014	SWIR InGaAs	2600 - 1200 nm	60 MHz	1.05 A/W @ 2300 nm	0.3-mmD	0.5 μA	0.5 pW	FS / Fiber		595.00 / 675.00
SIP017	SWIR InGaAs [AC/DC]	2600 - 1200 nm	60 MHz	1.05 A/W @ 2300 nm	0.3-mmD	0.5 μA	0.5 pW	FS / Fiber		695.00 / 775.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling *	Power	US / Intl.
IPD007	NIR InGaAs	1800 - 800 nm	20 ns	0.95 A/W @ 1550 nm	1-mmD	1 nA	25	FS / Fiber		995.00 / 1,000.00
IPD037	NIR InGaAs	1800 - 800 nm	1.5 ns	0.95 A/W @ 1550 nm	0.35-mmD	0.1 nA	7	FS / Fiber		395.00 / 450.00
IPD038	NIR InGaAs [AC/DC]	1800 - 800 nm	1.5 ns	0.95 A/W @ 1550 nm	0.35-mmD	0.1 nA	7	FS / Fiber		495.00 / 550.00
IPD750	NIR InGaAs	1800 - 800 nm	0.2 ns	0.95 A/W @ 1550 nm	0.08-mmD	0.01 nA	3	FS / Fiber		595.00 / 675.00
IPD753	NIR InGaAs [AC/DC]	1800 - 800 nm	0.2 ns	0.95 A/W @ 1550 nm	0.08-mmD	0.01 nA	3	FS / Fiber		695.00 / 775.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling *	Power	US / Intl.
SPD001	Si (IR-Vis-UV)	1000 - 350 nm	0.1 GHz	0.6 A/W @ 850 nm	3-mmD	0.1 nA	9	FS		750.00 / 820.00
SPD003	Si (IR-Vis-UV)	1000 - 350 nm	0.1 GHz	0.65 A/W @ 900 nm	1.1-mmD	0.1 nA	7.5	FS / Fiber		450.00 / 500.00
SPD005	Si (IR-Vis-UV)	1000 - 350 nm	0.5 GHz	0.6 A/W @ 800 nm	0.75-mmD	0.01 nA	3	FS / Fiber		350.00 / 275.00
SPD012	Si (IR-Vis-UV)	1000 - 350 nm	0.2 ns	0.5 A/W @ 750 nm	0.3-mmD	0.001 nA	1.2	FS / Fiber		395.00 / 450.00
SPD013	Si (IR-Vis-UV) / [AC/DC]	1000 - 350 nm	0.2 ns	0.5 A/W @ 750 nm	0.3-mmD	0.001 nA	1.2	FS / Fiber		495.00 / 550.00
SPD137	Si (IR-Vis-UV)	1000 - 350 nm	0.1 ns	0.4 A/W @ 650 nm	0.08-mmD	0.001 nA	0.5	FS / Fiber		895.00 / 975.00
SPD138	Si (IR-Vis-UV) / [AC/DC]	1000 - 350 nm	0.1 ns	0.4 A/W @ 650 nm	0.08-mmD	0.001 nA	0.5	FS / Fiber		995.00 / 1,100.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling *	Power	US / Intl.
UVX003	UV-Si	1100 - 190 nm	< 100 ns	0.12 A/W @ 190 nm	1-mmD	0.01 nA	6	FS / Fiber		495.00 / 550.00
UVX007	UV-Si [AC/DC]	1100 - 190 nm	< 100 ns	0.12 A/W @ 190 nm	1-mmD	0.01 nA	6	FS / Fiber		595.00 / 675.00
UVX003	UV-Si	1100 - 190 nm	< 200 ns	0.12 A/W @ 190 nm	2.5-mmD	0.03 nA	8	FS		695.00 / 775.00
UVX007	UV-Si	1100 - 190 nm	< 500 ns	0.12 A/W @ 190 nm	3.5-mmD	0.05 nA	10	FS		795.00 / 880.00

* FC, SMA, ST available - Additional Cost USD 55.00
** SMA-BNC adapter optional

 

 

OEM High-Speed Photodetectors
[ InGaAs & Si : 2600 - 190 nm, MHz - GHz ]

 

These OEM (bare) unamplified modules are ideal for CW, heterodyne (modulated), or pulsed photodetection. They feature a wide selection of ultra-low noise high-speed photodiodes in a variety of photosensitive areas, broad spectral response, and high responsivity with coated optical windows or ball lens for fiber coupling. The output impedance is user specified 50-Ω or 1kΩ at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed to the working level of the photodiode. Units require static-free handling and protection, and ESD-safe tools. All items are non-returnable.

 

• 5000 - 2000 nm [MWIR] ; 2600 - 1200 nm [SWIR] ; 1800 - 800 nm [NIR] ; 1000 - 350 nm [IR-Vis-UV] ; 1100 - 190 nm [UV]
• Free Space and Fiber Coupled ( FC - UPC, FC - APC, SMA, ST )
• Photosensing areas : 0.1-mm diameter to 1-mm diameter
• Bandwidth : Hz - GHz PS-15D
• Noise : 1 fW / rt. Hz - < 1 pW / rt. Hz
• Responsivity :  SWIR : 1.1 A/W @ 2300 nm , NIR : 1 A/W @ 1550 nm , Vis : 0.5 A/W @ 800 nm , UV : 0.12 A/W @ 190 nm
• Multi - 10 mW level maximum operating power
• Output impedance is user selected (typical is 50-Ω)
• Fixed bias  for low noise and high stability over wide operating ranges
• External Regulated Power Required
• Rugged-Mini : 30 mm x 30 mm / Micro-mini : 25 mm x 9 mm (all types have mounting holes)
• SMA 50-Ohm RF signal output with BNC-adapter optional
• Customized Models Available ( Wavelength, Detector Area, Bandwidth, Power / Amplification, etc. )
• ESD Sensitive - ESD Handling  / Tools Required
• Matched pair components available

 

 

 

 

SPECIFICATIONS:

 

MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling *	Package **	Power	US / Intl.
SRX137	SWIR InGaAs	2600 - 1200 nm	60 MHz	1.05 A/W @ 2300 nm	0.3-mmD	0.5 μA	0.5 pW	FS / FC	Micro-mini		600.00 / 660.00
SWR251	SWIR InGaAs	2600 - 1200 nm	60 MHz	1.05 A/W @ 2300 nm	0.3-mmD	0.5 μA	0.5 pW	Fiber	Rugged mini		650.00 / 725.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling *	Package **	Power	US / Intl.
GIN003	NIR InGaAs	1800 - 800 nm	1.5 ns	0.95 A/W @ 1550 nm	0.35-mmD	0.1 nA	7	FS / FC	Micro-mini		500.00 / 550.00
GIN007	NIR InGaAs	1800 - 800 nm	0.2 ns	0.95 A/W @ 1550 nm	0.08-mmD	0.01 nA	3	FS / FC	Micro-mini		650.00 / 725.00
GDN012	NIR InGaAs	1800 - 800 nm	1.5 ns	0.95 A/W @ 1550 nm	0.35-mmD	0.1 nA	7	Fiber	Rugged mini		550.00 / 600.00
GDN018	NIR InGaAs	1800 - 800 nm	0.2 ns	0.95 A/W @ 1550 nm	0.08-mmD	0.01 nA	3	Fiber	Rugged mini		650.00 / 725.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling *	Package **	Power	US / Intl.
PHS003	Si (IR-Vis-UV)	1000 - 350 nm	0.2 ns	0.5 A/W @ 750 nm	0.3-mmD	0.001 nA	1.2	FS / FC	Micro-mini		500.00 / 550.00
PHS017	Si (IR-Vis-UV)	1000 - 350 nm	0.1 ns	0.5 A/W @ 650 nm	0.08-mmD	0.001 nA	0.5	FS / FC	Micro-mini		995.00 / 1,100.00
PDS014	Si (IR-Vis-UV)	1000 - 350 nm	0.2 ns	0.5 A/W @ 750 nm	0.3-mmD	0.001 nA	1.2	Fiber	Rugged mini		550.00 / 600.00
PDS018	Si (IR-Vis-UV)	1000 - 350 nm	0.1 ns	0.5 A/W @ 650 nm	0.08-mmD	0.001 nA	0.5	Fiber	Rugged mini		995.00 / 1,100.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling *	Package **	Power	US / Intl.
HUV007	UV-Si	1100 - 190 nm	< 100 ns	0.12 A/W @ 190 nm	1-mmD	0.01 nA	6	FS	Micro-mini		600.00 / 660.00
UVG008	UV-Si	1100 - 190 nm	< 100 ns	0.12 A/W @ 190 nm	1-mmD	0.01 nA	6	Fiber	Rugged mini		650.00 / 725.00

* FC, SMA, ST available for SWR / GDN / PDS / UVG Models (Rugged mini)  &  FC for SRX / GIN / PHS / HUV Models (Micro-mini) - Additional Cost USD 55.00
** SMA-BNC adapter optional

 

 

MHz - GHz  Photodetector Signal Voltage Amplifiers [ CALxxx / LSEXXX ]

 

These ultra-compact modules are ideal for the amplification of photodetector signals. The amplifiers are selected for low noise and linear response over the operating bandwidth. The input / output impedance is 50-Ω at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. Mounting holes are provided. Modular CAL models are encased in a plastic enclosure and are signal amplifiers. The LSE models are fully customizable for applications in MIR / LIR detectors requiring a series bias resistor, with adjustable bias voltage from ~0 - 30 V.

 

• Gain Ranges from < 10 - 1k  (max)
• Bandwidth : MHz - GHz PS-15D with AC or DC coupling and 50-Ω output impedance
• Amplifier noise : 1 - 4 nV / rt. Hz 
• External Power of  ± 15 VDC / 100 - 250 mA required /
• CALxxx Series are utilized as Voltage Signal Amplifiers / Please Note : Maximum Input Voltage Specification / I/O Impedance : 50-Ω
• LSExxx Series ( AC coupled ) are designed for flexible usage, customized for MCT (HgCdTe), PbS, PbSe, etc., Photodetectors utilizing a bias resistor
• SMA 50-Ω RF signal input / output for high-speed models with BNC-adapter optional
• Customized Models Available ( for MCT (HgCdTe), PbS, PbSe, etc. Photodetectors )
• ESD SENSITIVE DEVICES - SPECIAL ESD HANDLING / TOOLS REQUIRED - NON RETURNABLE
• Matched pair components available

 

 

 

 

MODULE  SIGNAL AMP. SPECIFICATIONS:

 

MODEL	Gain (V/A)  or  dB	Bandwidth	Input Coupling	Max Input (p-p)	Output Coupling	Package **	Power		US / Intl.
CAL101	20 dB	1 GHz	SMA (50Ω)	0.1 V	DC	Module	±15 VDC Reg		1,050.00 / 1,150.00
CAL108	10 dB	1 GHz	SMA (50Ω)	0.2 V	DC	Module	±15 VDC Reg		950.00 / 1,050.00
CAL131	10 (V/V)	600 MHz	SMA (50Ω)	0.5 V	DC	Module	±15 VDC Reg		750.00 / 825.00
CAL152	20 (V/V)	200 MHz	SMA (50Ω)	0.25 V	DC	Module	±15 VDC Reg		750.00 / 825.00
CAL178	50 (V/V)	60 MHz	SMA (50Ω)	0.1 V	DC	Module	±15 VDC Reg		750.00 / 825.00
CAL225	100 (V/V)	150 MHz	SMA (50Ω)	0.05 V	DC	Module	±15 VDC Reg		950.00 / 1,050.00
CAL333	1000 (V/V)	75 MHz	SMA (50Ω)	5 mV	DC	Module	±15 VDC Reg		950.00 / 1,050.00
LSEXXX	Custom (V/V)	Custom MHz	SMA (xxΩ)	Custom (Adj.)	AC or DC	Module	± Custom

** SMA-BNC adapter optional

 

 

 

FC / SMA / ST  Receptacle - Encased  SM / MM Fiber-Coupled  Detector Elements
[ InGaAs & Si : 2600 - 190 nm ]

 

These fiber-coupled photodetector elements ( FC / SMA / ST ) are ideal for integration in end-user designed equipment to facilitate CW, heterodyne (modulated), and optical pulse measurements. They feature a wide selection of ultra-low noise, high-speed, photodiode elements in a variety of photosensitive areas, with broad spectral response, high responsivity, and AR-coated window / ball lens optical power entry. Each unit is rigorously examined in a multi-function inspection platform, and evaluated to meet various typical performance specifications. These units have a compact footprint (see specifications below for all dimensions) with (SAE 2-56) threaded mechanical support for rugged and reliable operation. The mounting hardware is provided together with a screw-on dust cap. All units require electrostatic-free handling, ESD-safe environment, and ESD protection. Solder times should be limited to 1-2 seconds at 300 C at a single stroke. All items are single use only and are non-returnable.

 

• 5000 - 2000 nm [MWIR] ; 2600 - 1200 nm [SWIR] ; 1800 - 800 nm [NIR] ; 1000 - 350 nm [IR-Vis-UV] ; 1100 - 190 nm [UV]
• Fiber Coupled ( Basic : FC - UPC, SMA, ST ) (excl. GCR215, FCX125 - FS only)
• Wider compatibility with  all  fiber optic delivery system types utilizing optional custom pigtails
• MM compatible optical fiber pigtails available
• Speed : ns - ps
• Responsivity :  SWIR : 1.1 A/W @ 2300 nm , NIR : 1 A/W @ 1550 nm , Vis : 0.5 A/W @ 800 nm , UV : 0.12 A/W @ 190 nm
• Low dark current : nA - μA
• Noise : 1 fW / rt. Hz - 1 pW / rt. Hz
• Photosensing areas : 0.1-mm diameter to 1-mm diameter
• Active surface 0.05-in/1.25-mm (typical) from optical entry
• Multi - mW level maximum operating power
• Coated optical window / ball lens optical power entry
• Isolated anode / cathode lead configuration with separate case ground lead (excl. GCR215, FCX125, FUV003)
• Leads oriented at adjacent 90-degree positions on 0.1-in (2.5-mm) diam. circle [Tab = cathode>case>anode (opposite cathode)]
• Leads : 0.5 in (12.5 mm) length x 0.020 in (0.5 mm) diameter (all units)
• GCR215, FCX125 are FS only and provided with SMA RF output connectors
• External high-speed passive (50-Ω terminated) or amplified packaging / assembly options available in OEM format
• PCB RF detector package with non-terminated SMA RF output optional (specify: pin / ground = anode / cathode : Type A/B)
• Regulated power only - Optional power conditioning available
• Panel mount and / or PCB mount capability for rugged operation
• FC - Panel mount aperture : 0.315-in Diam (D-hole) x 0.050-in panel thickness
• FC - PCB rectangular mounting base footprint : 0.5 in (W)  x 0.365 in (H) x 0.145 in (D)
• FC - PCB mounting screw hole position from entry flange : 0.073 in
• FC - PCB screw holes separation (centered on module footprint) : 0.375 in / 0.082 inD (#45 drill)
• SMA - Panel mount aperture : 0.25-in Diam x 0.050-in panel thickness
• SMA - PCB rectangular mounting base footprint : 0.5 in (W)  x 0.365 in (H) x 0.23 in (D)
• SMA - PCB mounting screw hole position from entry flange : 0.080 in
• SMA - PCB screw holes separation (centered on module footprint) : 0.375 in / 0.082 inD (#45 drill)
• ST - Panel mount aperture : 0.365-in Diam x 0.050-in panel thickness
• ST - PCB rectangular mounting base footprint : 0.5 in (W)  x 0.365 in (H) x 0.23 in (D)
• ST - PCB mounting screw hole position from entry flange : 0.080 in
• ST - PCB screw holes separation (centered on module footprint) : 0.375 in / 0.082 inD (#45 drill)
• Single use consumable parts only - multiple solder events per lead not recommended to prevent failure
• Solder time 1-2 seconds @ 300 C.  CAUTION : excessive heat damages the unit  (excl. GCR215, FCX125)
• Desolder not recommended
• Individually Screened & Pretested, Evaluated, & ESD-proof Packaged
• Performance testing utilizing linear, log, static, and dynamic techniques and methods
• Dust-free cap and mounting screws (SAE 2-56) provided
• Customized Models ( Wavelength, Detector Area, Bandwidth, Power / Amplification, etc. )
• ESD Sensitive - ESD Handling  / ESD Safe Assembly Tools & Environment Required
• Non-returnable, non-refundable units
• Matched pair components available

 

 

 

 

SPECIFICATIONS:

 

MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Bias	Coupling*	Power	US / Intl.
LIR078	SWIR InGaAs	2600 - 1200 nm	40 ns	1.05 A/W @ 2300 nm	1-mmD	3 μA	1 pW	0.1 V	All		600.00 / 675.00
LIR031	SWIR InGaAs	2600 - 1200 nm	60 MHz	1.05 A/W @ 2300 nm	0.3-mmD	500 nA	0.5 pW	0.5 V	All		450.00 / 500.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Bias	Coupling*	Power	US / Intl.
GCR037	NIR InGaAs	1800 - 800 nm	20 ns	0.95 A/W @ 1550 nm	1-mmD	0.2 nA	25	0.85 V	All		750.00 / 825.00
GCR052	NIR InGaAs	1800 - 800 nm	1.5 ns	0.95 A/W @ 1550 nm	0.3-mmD	0.15 nA	7	5 V	All		450.00 / 500.00
GCR178	NIR InGaAs	1800 - 800 nm	0.2 ns	0.95 A/W @ 1550 nm	0.1-mmD	0.1 nA	3	5 V	All		525.00 / 575.00
GCR215	NIR InGaAs	1800 - 800 nm	35 ps	0.95 A/W @ 1550 nm	0.035 mm	0.01 nA	1.5	5 V	FS/3.5mm(RF)		1,500.00 / 1,750.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Bias	Coupling*	Power	US / Intl.
FCX038	Si (IR-Vis-UV)	1000 - 350 nm	1 ns	0.5 A/W @ 850 nm	0.73-mmD	0.015 nA	3	5 V	All		300.00 / 335.00
FCX052	Si (IR-Vis-UV)	1000 - 350 nm	0.12 ns	0.5 A/W @ 850 nm	0.3-mmD	0.003 nA	1.2	5 V	All		350.00 / 385.00
FCX073	Si (IR-Vis-UV)	1000 - 350 nm	0.045 ns	0.5 A/W @ 800 nm	0.075-mmD	0.003 nA	0.5	5 V	All		450.00 / 500.00
FCX125	Si (IR-Vis-UV)	1000 - 350 nm	< 35 ps	0.5 A/W @ 750 nm	0.005 mm	0.01 nA	3	5 V	FS/3.5mm(RF)		1,500.00 / 1,750.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Bias	Coupling*	Power	US / Intl.
FUV003	UV-Si	1100 - 190 nm	< 100 ns	0.12 A/W @ 190 nm	1-mmD	0.03 nA	6	0.1 V	All		450.00 / 500.00

* FC, SMA, ST available ( NOTE : APC, LC, SC, etc available with 1-m adapter cables ) ; Note : FUV - SMA / ST Only

 

 

MHz - GHz  Passive & Amplified Photodiode Test Fixtures [ PTFxxx ]

[ Compatible with all InGaAs & Si : 2600 - 190 nm ]

 

Photodiode Test Fixture Modules are designed to fully test and evaluate the dynamic and CW performance of any standard Si and InGaAs photodiode in situ. Passive, Amplified RF and CW, and Dual Balanced test fixtures are available individually or integrated to measure the performance of any photodiode packaged with independent cathode and anode leads encased in standard TO packages with case ground. The fixtures are provided with trimpot adjustable regulated bias from ~ 0.015 V to user specified (pre-damage) maximum value (typically 12 V). An in-line current monitor circuit is integrated for direct photodiode current evaluation. An LCD display is provided to monitor various parameters such as photodiode bias, photodiode current, and bi-polar photovoltaic response. The passive high-speed module is configured to evaluate the full bandwidth performance of the photodiode, and features selectable output terminations of 50 Ω, 1k Ω, or "open." The amplified modules are configured for low noise and linear response over operating bandwidth to 1 GHz, with output impedance of 50 Ω. The board features regulated power, reverse polarity protection, ESD protection down to the device level, and a cascade noise filter array. Fiber coupling assembly is optional. An on-board photodiode socket is provided for simple quick insert-test-remove sequence. Typical comprehensive test time is 5 - 30 minutes based on user requirements. RF Test equipment is not supplied. The test fixtures are OEM format and mounting holes are provided for external end user base. External power is required.

 

• Passive, Amplified, Dual Balanced operation options  (individual or integrated)
• LCD digital photodiode CW operation  indicator
• Passive Bandwidth : Photodiode specified with AC or DC coupling and 50-Ω / 1k-Ω / open output impedance
• Amplified Bandwidth : MHz - GHz with AC or DC coupling and 50-Ω output impedance
• Amplifier noise : ~ 1 nV / rt. Hz 
• External Power of  ± 15 VDC / 100 - 350 mA required /
• SMA 50-Ω RF signal output with BNC-adapter optional
• Customized Models Available ( for MCT (HgCdTe), PbS, PbSe, etc. Photodetectors )
• ESD SENSITIVE DEVICES - SPECIAL ESD HANDLING / TOOLS REQUIRED - NON RETURNABLE

 

PHOTODIODE TEST FIXTURE SPECIFICATIONS:  to e-mail a quote request & provide your details )

 

MODEL	Function	Bandwidth	Output Impedance	Features	Output Coupling	Package **	Power		US / Intl.
PTF010	Passive	PD Spec	50 / 1k Ω / open	CW Current Mon.	DC / AC (opt)	Module	±15 VDC Reg		4,950.00 / NA
PTF031	Amplified	450 MHz	50Ω	Gain = 50 dB	DC / AC (opt)	Module	±15 VDC Reg		5,950.00 / NA
PTF038	Amplified	1 GHz	50Ω	Gain = 54 dB	DC / AC (opt)	Module	±15 VDC Reg		6,950.00 / NA
PTF052	Dual Balanced	450 MHz	50Ω	Gain = 50 dB/20 dB	DC / AC (opt)	Module	±15 VDC Reg		8,950.00 / NA
PTF078	Passive + Amplified	PD Spec / 450 MHz	Pass:50/1kΩ, Amp:50Ω	Integrated	DC / AC (opt)	Module	±15 VDC Reg		9,950.00 / NA
PTF137	Dual Bal+Amp+Pass	450 MHz / PD Spec	50Ω,Pass:50/1kΩ	Integrated	DC / AC (opt)	Module	±15 VDC Reg		14,950.00 / NA
PTFxxx	Custom []	Custom MHz	SMA (xxΩ)	Custom (Adj.)	AC or DC	Module	± Custom

** SMA-BNC adapter optional

 

 

End-Cap Encased  Detectors
[ InGaAs & Si : 2600 - 190 nm ]

 

These End-Cap (externally threaded SM05CP2) encased detectors are ideal for CW, heterodyne (modulated), or pulsed measurements. They feature a wide selection of ultra-low noise high-speed unamplified units in a variety of areas, with broad spectral response, and high responsivity, and are equipped with optical windows. The output impedance is user specified 50-Ω or 1kΩ at the SMA output connector. These units are optimized for low capacitance (~ 1pF) low impedance (50-Ω) instrumentation and test equipment. The high-speed units require low capacitance semi-rigid cable connections of < 15 cm for full bandwidth performance. SMA-BNC adapters are optional. The bias voltage is fixed to the working level of the photodiode, and leads for external power are provided. All units require electrostatic-free handling, ESD-safe environment, and ESD protection.

 

• 5000 - 2000 nm [MWIR] ; 2600 - 1200 nm [SWIR] ; 1800 - 800 nm [NIR] ; 1000 - 350 nm [IR-Vis-UV] ; 1100 - 190 nm [UV]
• Wide compatibility with  all  SM-Series tubes and components
• Mounted with free-space optical entry on the threaded side; centered on end cap.
• Case ground to end cap / excluding UUVxxx
• Photosensing areas : 0.3-mm diameter to 1-mm diameter
• Multi - mW level maximum operating power
• Speed : ns / MHz
• Noise : sub pW / rt. Hz
• Responsivity :  SWIR : 1.1 A/W @ 2300 nm , NIR : 1 A/W @ 1550 nm , Vis : 0.5 A/W @ 800 nm , UV : 0.12 A/W @ 190 nm
• Integrated power line filters
• Leads for external power provided
• Individually pretested, evaluated, & packaged
• Customized Models Available ( Wavelength, Detector Area, Bandwidth, Power / Amplification, etc. )
• ESD Sensitive - ESD Handling  / Tools Required
• Non-returnable, non-refundable units
• Matched pair components available

 

 

 

 

SPECIFICATIONS:

 

MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling	Package	Power	US / Intl.
LLR137	SWIR InGaAs	2600 - 1200 nm	40 ns	1.05 A/W @ 2300 nm	1-mmD	3 μA	1 pW	FS	SM05CP2		1,500.00 / 1,650.00
LLR251	SWIR InGaAs	2600 - 1200 nm	60 MHz	1.05 A/W @ 2300 nm	0.3-mmD	500 nA	0.5 pW	FS	SM05CP2		1,350.00 / 1,500.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling	Package	Power	US / Intl.
GGC381	NIR InGaAs	1800 - 800 nm	20 ns	0.95 A/W @ 1550 nm	1-mmD	0.2 nA	25	FS	SM05CP2		1,500.00 / 1,650.00
GGC496	NIR InGaAs	1800 - 800 nm	1.5 ns	0.95 A/W @ 1550 nm	0.3-mmD	0.15 nA	7	FS	SM05CP2		1,350.00 / 1,500.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling	Package	Power	US / Intl.
CCX215	Si (IR-Vis-UV)	1000 - 350 nm	1 ns	0.5 A/W @ 850 nm	0.73-mmD	0.015 nA	3	FS	SM05CP2		1,250.00 / 1,375.00
CCX371	Si (IR-Vis-UV)	1000 - 350 nm	0.12 ns	0.5 A/W @ 850 nm	0.3-mmD	0.003 nA	1.2	FS	SM05CP2		1,350.00 / 1,500.00
MODEL	Type	Spectrum	Speed	Responsivity	Area	Dark Current	NEP (fW/rt.Hz)	Coupling	Package	Power	US / Intl.
UUV964	UV-Si	1100 - 190 nm	< 100 ns	0.12 A/W @ 190 nm	1-mmD	0.03 nA	6	FS	SM05CP2		1,350.00 / 1,500.00

 

 

 

 

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