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  Multi-Element  Si (Vis / UV)  & InGaAs (NIR / SWIR) Photodetector Arrays.             
  [ InGaAs & Si : 2600 - 190 nm, kHz - GHz ]                                                                   

 

    Passive and amplified photodetectors configured as single and dual dimensional planar arrays, are required and ideal for low-to-high frequency, low noise applications in optical beam-position tracking, photoacoustics, large-area wavefront analysis, and high-gain applications in spectroscopy and scatterometry. Linear (1-D) multi-element (independent) Si photodiodes integrated in an array on a single chip carrier, with narrow inter-detector spacing (pitch) of < 1-mm are available in passive or amplified packages. Individually amplified (or passive) compact-modular photodetector 1-D or 2-D array assemblies (Si & InGaAs) integrated on a printed circuit board are available with wider (~ 10-mm) inter-unit spacing (end user spec). These modular-array units have independent low-noise, high-responsivity photodiode elements (TO-18 package) with spectral sensitivity ranging from 200 / 320 nm (UV) to 1000 nm (Vis - IR) for Si arrays, 800 nm to 1800 nm for NIR-InGaAs arrays, and 1200 nm to 2600 nm for SWIR-InGaAs arrays. All amplified modules have fixed single gain or optional switched multiple gain-bandwidth settings, for optical sensitivity covering a wide dynamic range. The amplifiers are selected for low noise and linear response over the full bandwidth. The photodiode bias on the fixed gain models is preset for stable operation. The photodiode bias on high-gain models is optionally adjustable for optimal operation. Compatibility with test instrumentation or DAQ is facilitated by 50-Ω output impedance. Individual-element signal outputs are available on user-specified connectors : SM(A)(B)(C) / MMCX output connectors for each channel are optional, as is a DB-connector (or equivalent) option, compatible with most DAQ boards for LabVIEW system integration. External regulated power ± 15 VDC to 10 Amps is required.

 

 

      

 

 

PHOTODIODE  (1-D)  CHIP   ARRAYS

 

SPECIFICATIONS:

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (pW/rt.Hz)

Packaging **

Power

US / Intl.

PDA013

16-Element Si (fixed)

1000 - 350 nm

100M

15 kHz

0.7 A/W @ 970 nm

 0.7x2 mm

< 0.05 nA

0.06

OEM Board

± 15 VDC

4,950.00 / 5,500.00

PDA052

16-Element Si (fixed)

1000 - 350 nm

1.75M

1 MHz

0.7 A/W @ 970 nm

 0.7x2 mm

< 0.05 nA

0.12

OEM Board

± 15 VDC

4,950.00 / 5,500.00

PDA087

16-Element Si (fixed)

1000 - 350 nm

80k

25 MHz

0.7 A/W @ 970 nm

 0.7x2 mm

< 0.05 nA

2.5

OEM Board

± 15 VDC

4,950.00 / 5,500.00

 

 

 

 

 

 

 

 

 

 

 

 

PDA * * *

XX-Element Si (fixed)

1000 - 350 nm

Custom

Custom

 

 

 

 

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (pW/rt.Hz)

Packaging **

Power

US / Intl.

PMG021

16-Element Si (multi)

1000 - 350 nm

1/10/100M

< 1 MHz

0.7 A/W @ 970 nm

 0.7x2 mm

< 0.05 nA

0.06

OEM Board

± 15 VDC

5,950.00 / 6,750.00

PMG037

16-Element Si (multi)

1000 - 350 nm

80/150/300k

< 10 MHz

0.7 A/W @ 970 nm

 0.7x2 mm

< 0.05 nA

2.2

OEM Board

± 15 VDC

5,950.00 / 6,750.00

PMG183

16-Element Si (multi)

1000 - 350 nm

20/50/80k

25 MHz

0.7 A/W @ 970 nm

 0.7x2 mm

< 0.05 nA

2.5

OEM Board

± 15 VDC

6,950.00 / 7,750.00

 

 

 

 

 

 

 

 

 

 

 

 

PMG * * *

XX-Element Si (multi)

1000 - 350 nm

Custom

Custom

 

 

 

 

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

** SMA-BNC adapters optional

 

 

 

PHOTODETECTOR   (1-D / 2-D)   MODULE   ARRAYS

 

SPECIFICATIONS:

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (pW/rt.Hz)

Packaging **

Power

US / Intl.

SSW * * *

XX-Detector SWIR InGaAs (fxd)

2600 - 1200 nm

Custom

Custom

1.05 A/W @ 2300 nm

0.3 mmD

<0.5 µA

-

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

MSW * * *

XX-Detector SWIR InGaAs (mlt)

2600 - 1200 nm

Custom

Custom

1.05 A/W @ 2300 nm

0.3 mmD

<0.5 µA

-

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (pW/rt.Hz)

Packaging **

Power

US / Intl.

GIR * * *

XX-Detector NIR InGaAs (fixed)

1800 - 800 nm

Custom

Custom

0.95 A/W @ 1550 nm

0.3 mmD

<0.04 nA

-

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

MIR * * *

XX-Detector NIR InGaAs (multi)

1800 - 800 nm

Custom

Custom

0.95 A/W @ 1550 nm

0.3 mmD

<0.04 nA

-

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (pW/rt.Hz)

Packaging **

Power

US / Intl.

SSA * * *

XX-Detector Si (fixed)

1000 - 350 nm

Custom

Custom

0.6 A/W @ 800 nm

0.7 mmD

< 0.01 nA

-

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

MSA * * *

XX-Detector Si (multi)

1000 - 350 nm

Custom

Custom

0.6 A/W @ 800 nm

0.7 mmD

< 0.01 nA

-

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (pW/rt.Hz)

Packaging **

Power

US / Intl.

UVS * * *

XX-Detector UV-Si (fixed)

1000 - 190 nm

Custom

Custom

0.12 A/W @ 190 nm

1 mmD

 

-

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

MUV * * *

XX-Detector UV-Si (multi)

1000 - 190 nm

Custom

Custom

0.12 A/W @ 190 nm

1 mmD

 

-

OEM Board

± 15 VDC

Contact

 

 

 

 

 

 

 

 

 

 

 

 

** SMA-BNC adapters optional

 

 

 

 

 

 

 

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Em dedicacão á Santa Familia de Nazaré - Maria, Nossa Senhora de Fatima, São José, e Senhor JESUS