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  Multi-Element  Si (Vis / UV)  & InGaAs (NIR / SWIR) Photodetector Arrays.             
  [ InGaAs & Si : 2600 - 190 nm, kHz - GHz ]                                                                   

 

    Passive and amplified photodetectors configured as single and dual dimensional planar arrays, are required and ideal for low-to-high frequency, low noise applications in optical beam-position tracking, photoacoustics, large-area wavefront analysis, and high-gain applications in spectroscopy and scatterometry. Linear (1-D) multi-element (independent) Si photodiodes integrated in an array on a single chip carrier, with narrow inter-detector spacing (pitch) of < 1-mm are available in passive or amplified packages. Individually amplified (or passive) compact-modular photodetector 1-D or 2-D array assemblies (Si & InGaAs) integrated on a printed circuit board are available with wider (~ 10-mm) inter-unit spacing (end user spec). These modular-array units have independent low-noise, high-responsivity photodiode elements (TO-18 package) with spectral sensitivity ranging from 200 / 320 nm (UV) to 1000 nm (Vis - IR) for Si arrays, 800 nm to 1800 nm for NIR-InGaAs arrays, and 1200 nm to 2600 nm for SWIR-InGaAs arrays. All amplified modules have fixed single gain or optional switched multiple gain-bandwidth settings, for optical sensitivity covering a wide dynamic range. The amplifiers are selected for low noise and linear response over the full bandwidth. The photodiode bias on the fixed gain models is preset for stable operation. The photodiode bias on high-gain models is optionally adjustable for optimal operation. Compatibility with test instrumentation or DAQ is facilitated by 50-Ω output impedance. Individual-element signal outputs are available on user-specified connectors : SM(A)(B)(C) / MMCX output connectors for each channel are optional, as is a DB-connector (or equivalent) option, compatible with most DAQ boards for LabVIEW system integration. External regulated power ± 15 VDC to 10 Amps is required.

 

• 2600 - 1200 nm [SWIR] ; 1800 - 800 nm [NIR] ; 1000 - 350 nm [IR-Vis-UV] ; 1100 - 190 nm [UV]
• Responsivity :  SWIR : 1.1 A/W @ 2300 nm , NIR : 1 A/W @ 1550 nm , Vis : 0.5 A/W @ 800 nm , UV : 0.12 A/W @ 190 nm
• Free Space / Fiber Coupled (only on module arrays)
• PDA & PMG Models based on a single chip with adjacent photosensing areas / pitch fixed (< 1-mm)
• ALL photodetector-module arrays have typical pitch of 10 mm x 10 mm / end user specified
• Bandwidth : kHz - MHz  with AC / DC coupling options
• Amplifier Gain : 80 dB to 180 dB
• Fixed gain and multi-gain settings
• Nanowatt to Microwatt optical power level sensitivity
• Single-stage low noise amplification
• Amplifier noise : < 4 nV / rt. Hz 
• Detector noise : nW - pW / rt. Hz
• Regulated Power Supply Optional ( ± 15 VDC to 10 Amps )
• SMA / B / C RF / MMCX / DB-xx Signal 50-Ω Output Connectors, SMA standard, SMA-BNC-adapter optional
• DB-37 Connector optional with full National Instruments LabVIEW DAQ System compatibility
• Customized Models Available : ( Wavelength, Detector Area, Bandwidth, Power / Amplification, Noise, etc. )

 

      

 

 

PHOTODIODE  (1-D)  CHIP   ARRAYS

 

SPECIFICATIONS:

 

MODEL	Type	Spectrum	Gain (V/A)	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Packaging **	Power	US / Intl.
PDA013	16-Element Si (fixed)	1000 - 350 nm	100M	15 kHz	0.7 A/W @ 970 nm	0.7x2 mm	< 0.05 nA	0.06	OEM Board	± 15 VDC	4,950.00 / 5,500.00
PDA052	16-Element Si (fixed)	1000 - 350 nm	1.75M	1 MHz	0.7 A/W @ 970 nm	0.7x2 mm	< 0.05 nA	0.12	OEM Board	± 15 VDC	4,950.00 / 5,500.00
PDA087	16-Element Si (fixed)	1000 - 350 nm	80k	25 MHz	0.7 A/W @ 970 nm	0.7x2 mm	< 0.05 nA	2.5	OEM Board	± 15 VDC	4,950.00 / 5,500.00
PDA * * *	XX-Element Si (fixed)	1000 - 350 nm	Custom	Custom					OEM Board	± 15 VDC	Contact
MODEL	Type	Spectrum	Gain (V/A)	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Packaging **	Power	US / Intl.
PMG021	16-Element Si (multi)	1000 - 350 nm	1/10/100M	< 1 MHz	0.7 A/W @ 970 nm	0.7x2 mm	< 0.05 nA	0.06	OEM Board	± 15 VDC	5,950.00 / 6,750.00
PMG037	16-Element Si (multi)	1000 - 350 nm	80/150/300k	< 10 MHz	0.7 A/W @ 970 nm	0.7x2 mm	< 0.05 nA	2.2	OEM Board	± 15 VDC	5,950.00 / 6,750.00
PMG183	16-Element Si (multi)	1000 - 350 nm	20/50/80k	25 MHz	0.7 A/W @ 970 nm	0.7x2 mm	< 0.05 nA	2.5	OEM Board	± 15 VDC	6,950.00 / 7,750.00
PMG * * *	XX-Element Si (multi)	1000 - 350 nm	Custom	Custom					OEM Board	± 15 VDC	Contact

** SMA-BNC adapters optional

 

 

 

PHOTODETECTOR   (1-D / 2-D)   MODULE   ARRAYS

 

SPECIFICATIONS:

 

MODEL	Type	Spectrum	Gain (V/A)	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Packaging **	Power	US / Intl.
SSW * * *	XX-Detector SWIR InGaAs (fxd)	2600 - 1200 nm	Custom	Custom	1.05 A/W @ 2300 nm	0.3 mmD	<0.5 µA	-	OEM Board	± 15 VDC	Contact
MSW * * *	XX-Detector SWIR InGaAs (mlt)	2600 - 1200 nm	Custom	Custom	1.05 A/W @ 2300 nm	0.3 mmD	<0.5 µA	-	OEM Board	± 15 VDC	Contact
MODEL	Type	Spectrum	Gain (V/A)	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Packaging **	Power	US / Intl.
GIR * * *	XX-Detector NIR InGaAs (fixed)	1800 - 800 nm	Custom	Custom	0.95 A/W @ 1550 nm	0.3 mmD	<0.04 nA	-	OEM Board	± 15 VDC	Contact
MIR * * *	XX-Detector NIR InGaAs (multi)	1800 - 800 nm	Custom	Custom	0.95 A/W @ 1550 nm	0.3 mmD	<0.04 nA	-	OEM Board	± 15 VDC	Contact
MODEL	Type	Spectrum	Gain (V/A)	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Packaging **	Power	US / Intl.
SSA * * *	XX-Detector Si (fixed)	1000 - 350 nm	Custom	Custom	0.6 A/W @ 800 nm	0.7 mmD	< 0.01 nA	-	OEM Board	± 15 VDC	Contact
MSA * * *	XX-Detector Si (multi)	1000 - 350 nm	Custom	Custom	0.6 A/W @ 800 nm	0.7 mmD	< 0.01 nA	-	OEM Board	± 15 VDC	Contact
MODEL	Type	Spectrum	Gain (V/A)	Speed	Responsivity	Area	Dark Current	NEP (pW/rt.Hz)	Packaging **	Power	US / Intl.
UVS * * *	XX-Detector UV-Si (fixed)	1000 - 190 nm	Custom	Custom	0.12 A/W @ 190 nm	1 mmD		-	OEM Board	± 15 VDC	Contact
MUV * * *	XX-Detector UV-Si (multi)	1000 - 190 nm	Custom	Custom	0.12 A/W @ 190 nm	1 mmD		-	OEM Board	± 15 VDC	Contact

** SMA-BNC adapters optional

 

 

 

 

 

 

 

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