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Multi-Element   Si (Vis / UV)   &   InGaAs (NIR / SWIR) Photodetector Arrays
[ InGaAs & Si : 2600 – 190 nm, kHz – MHz ]

 

Amplified photodiode / photodetector arrays in OEM format are available as conventional multi-element photosensitive units integrated on a single chip with narrow inter-detector spacing (pitch) of < 1-mm in passive or amplified formats. Individually packaged multi-photodetector assemblies integrated on a single printed circuit board, based on our OEM  Amplified  and  High-Speed Passive   Photodetectors,  with wider inter-unit spacing (end user spec) are also available. All units have independent low-noise, high-responsivity elements with sensitivity up to 190 nm in the UV (Si), or down to 2600 nm in the SWIR (InGaAs), in passive or amplified configurations, with corresponding outputs on user-specified connectors (SMx or DB-xy). These array products are ideal for high-to-low frequency applications in position sensing, photoacoustics, large-area wavefront analysis, and high-gain applications in spectroscopy. All amplified modules have fixed or switched multiple gain-bandwidth settings, for high-to-low frequency operation. The amplifiers are selected for low noise and linear response over the operating bandwidth. The 30/15/10-MHz models feature AC/DC coupling on the outputs. Compatibility with test instrumentation or DAQ is facilitated by 50-Ω output impedance. The photodiode bias on the fixed gain models is preset for stable operation. The photodiode bias on the adjustable gain models is fully adjustable for optimal operation. SMA output connectors for each channel are optional, as is a DB-connector (or equivalent) option, compatible with most DAQ boards for LabVIEW. External regulated power ą 15 VDC to 10 Amps is required.

 

 

      

 

SPECIFICATIONS: ( Please click   to e-mail a quote request & provide your details )

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Packaging **

Power

US / Intl.

PMA180

16-Element Si (fixed)

1000 – 350 nm

1M

150 kHz

0.7 A/W @ 970 nm

 

<0.05 nA

6

OEM Board

ą 15 VDC

3,500.00 / 3,850.00

PMA017

16-Element Si (fixed)

1000 – 350 nm

10k

15 MHz

 

 

 

 

OEM Board

ą 15 VDC

3,500.00 / 3,850.00

PMA003

16-Element Si (fixed)

1000 – 350 nm

10k

< 30 MHz

 

 

 

 

OEM Board

ą 15 VDC

3,500.00 / 3,850.00

 

 

 

 

 

 

 

 

 

 

 

 

PMA * * *

XX-Element Si (fixed)

1000 – 350 nm

CUSTOM

CUSTOM

 

 

 

 

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Packaging **

Power

US / Intl.

PAS003

16-Element Si (multi)

1000 – 350 nm

10,20,40k

< 30 MHz

 

 

 

 

OEM Board

ą 15 VDC

5,995.00 / 6,600.00

PAS012

16-Element Si (multi)

1000 – 350 nm

30,60,120k

< 10 MHz

 

 

 

 

OEM Board

ą 15 VDC

5,995.00 / 6,600.00

PAS025

16-Element Si (multi)

1000 – 350 nm

0.1,0.5,1M

< 1.5 MHz

 

 

 

 

OEM Board

ą 15 VDC

5,995.00 / 6,600.00

 

 

 

 

 

 

 

 

 

 

 

 

PAS * * *

XX-Element Si (multi)

1000 – 350 nm

CUSTOM

CUSTOM

 

 

 

 

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

** SMA-BNC adapters optional

 

 

 

PHOTODETECTOR ARRAY ASSEMBLIES

 

SPECIFICATIONS: ( Please click   to e-mail a quote request & provide your details )

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Packaging **

Power

US / Intl.

STR * * *

XX-Detector SWIR InGaAs (fixed)

2600 – 1200 nm

CUSTOM

CUSTOM

1.05 A/W @ 2300 nm

0.3 mmD

<0.5 ľA

0.5 pW

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

SJR * * *

XX-Detector SWIR InGaAs (multi)

2600 – 1200 nm

CUSTOM

CUSTOM

1.05 A/W @ 2300 nm

0.3 mmD

<0.5 ľA

0.5 pW

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Packaging **

Power

US / Intl.

AMR * * *

XX-Detector NIR InGaAs (fixed)

1800 – 800 nm

CUSTOM

CUSTOM

0.95 A/W @ 1550 nm

0.3 mmD

<0.04 nA

5

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

AIR * * *

XX-Detector NIR InGaAs (multi)

1800 – 800 nm

CUSTOM

CUSTOM

0.95 A/W @ 1550 nm

0.3 mmD

<0.04 nA

5

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Packaging **

Power

US / Intl.

ASP * * *

XX-Detector Si (fixed)

1000 – 350 nm

CUSTOM

CUSTOM

0.6 A/W @ 800 nm

0.7 mmD

< 0.01 nA

3

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

SPA * * *

XX-Detector Si (multi)

1000 – 350 nm

CUSTOM

CUSTOM

0.6 A/W @ 800 nm

0.7 mmD

< 0.01 nA

3

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODEL

Type

Spectrum

Gain (V/A)

Speed

Responsivity

Area

Dark Current

NEP (fW/rt.Hz)

Packaging **

Power

US / Intl.

AUV * * *

XX-Detector UV-Si (fixed)

1000 – 190 nm

CUSTOM

CUSTOM

0.12 A/W @ 190 nm

1 mmD

 

6

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

XUV * * *

XX-Detector UV-Si (multi)

1000 – 190 nm

CUSTOM

CUSTOM

0.12 A/W @ 190 nm

1 mmD

 

6

OEM Board

ą 15 VDC

CONTACT

 

 

 

 

 

 

 

 

 

 

 

 

** SMA-BNC adapters optional

 

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