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OCT - DUALS
◉
AMPLIFIED
◉
APD
◉
HIGH-SPEED
◉
OEM
◉
POWER & ACC
Multi-Element Si (Vis / UV) & InGaAs (NIR / SWIR) Photodetector Arrays
[ InGaAs & Si : 2600 - 190 nm, kHz - MHz ]
Amplified photodiode / photodetector arrays in OEM format are available as conventional multi-element photosensitive units integrated on a single chip with narrow inter-detector
spacing (pitch) of < 1-mm in passive or amplified formats. Individually packaged multi-photodetector assemblies integrated on a single printed circuit board, based on our OEM Amplified and High-Speed Passive
Photodetectors, with wider inter-unit spacing (end user spec) are also available. All units have independent low-noise, high-responsivity elements with sensitivity up to 190 nm in the UV (Si), or down to 2600 nm in the SWIR (InGaAs), in passive or amplified configurations, with corresponding outputs on user-specified connectors (SMx or DB-xy). These array products are ideal for high-to-low frequency applications in position sensing, photoacoustics, large-area wavefront analysis, and high-gain applications in spectroscopy. All amplified modules have fixed or switched multiple gain-bandwidth settings, for high-to-low frequency operation. The amplifiers are selected for low noise and linear response over the operating bandwidth. The 30/15/10-MHz models feature AC/DC coupling on the outputs. Compatibility with test instrumentation or DAQ is facilitated by 50-Ω output impedance. The photodiode bias on the fixed gain models is preset for stable
operation. The photodiode bias on the adjustable gain models is fully adjustable for optimal operation. SMA output connectors for each channel are optional, as is a DB-connector (or equivalent) option, compatible with most DAQ boards for LabVIEW. External
regulated power ± 15 VDC to 10
Amps is required.
- 5000 - 2000 nm [MWIR] ; 2600 - 1200 nm
[SWIR] ; 1800 - 800 nm [NIR] ; 1000 - 350 nm [IR-Vis-UV] ; 1100 - 190 nm
[UV]
- Responsivity : SWIR : 1.1 A/W @ 2300 nm , NIR : 1 A/W
@ 1550 nm , Vis : 0.5 A/W @ 800 nm , UV : 0.12 A/W @ 190 nm
- Free Space / Fiber Coupled
- PMA & PAS Models based on a single
chip with adjacent photosensing areas / pitch fixed (< 1-mm)
- ALL photodetector array modules have
min pitch of 25 mm x 9 mm / end user specified
- Bandwidth : Hz - MHz with AC / DC coupling options
- Amplifier Gain : 80 dB to 120 dB
- Fixed gain and multi gain settings
- Nanowatt to Microwatt optical power
level sensitivity
- Single / Multi-Stage Amplification
- Amplifier noise : 1 - 4 nV / rt.
Hz
- Detector noise : nW - pW / rt. Hz
- [AC/DC]
Models have separate switchable DC block
- Regulated Power Supply Optional ( ±
15 VDC to 10 Amps )
- SMA / B / C RF / DB-xx Signal 50-Ω
Output Connectors, SMA standard, SMA-BNC-adapter optional
- DB-37 Connector optional with full
National Instruments LabVIEW DAQ System compatibility
- Customized Models Available ( Wavelength, Detector Area, Bandwidth, Power / Amplification, etc. )
SPECIFICATIONS:
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MODEL
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Type
|
Spectrum
|
Gain (V/A)
|
Speed
|
Responsivity
|
Area
|
Dark Current
|
NEP (pW/rt.Hz)
|
Packaging **
|
Power
|
US / Intl.
|
|
PMA180
|
16-Element
Si (fixed)
|
1000
- 350 nm
|
1M
|
150
kHz
|
0.7
A/W @ 970 nm
|
|
<0.05
nA
|
6
|
OEM
Board
|
±
15 VDC
|
3,500.00
/ 3,850.00
|
|
PMA017
|
16-Element
Si (fixed)
|
1000
- 350 nm
|
10k
|
15
MHz
|
|
|
|
|
OEM Board
|
±
15 VDC
|
3,500.00
/ 3,850.00
|
|
PMA003
|
16-Element
Si (fixed)
|
1000
- 350 nm
|
10k
|
<
30 MHz
|
|
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|
OEM Board
|
±
15 VDC
|
3,500.00
/ 3,850.00
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PMA * * *
|
XX-Element Si (fixed)
|
1000
- 350 nm
|
Custom
|
Custom
|
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OEM Board
|
±
15 VDC
|
Contact
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MODEL
|
Type
|
Spectrum
|
Gain (V/A)
|
Speed
|
Responsivity
|
Area
|
Dark Current
|
NEP (pW/rt.Hz)
|
Packaging **
|
Power
|
US / Intl.
|
|
PAS003
|
16-Element
Si (multi)
|
1000
- 350 nm
|
10,20,40k
|
<
30 MHz
|
|
|
|
|
OEM Board
|
±
15 VDC
|
5,995.00
/ 6,600.00
|
|
PAS012
|
16-Element
Si (multi)
|
1000
- 350 nm
|
30,60,120k
|
<
10 MHz
|
|
|
|
|
OEM Board
|
±
15 VDC
|
5,995.00
/ 6,600.00
|
PAS025
|
16-Element
Si (multi)
|
1000
- 350 nm
|
0.1,0.5,1M
|
<
1.5 MHz
|
|
|
|
|
OEM Board
|
±
15 VDC
|
5,995.00
/ 6,600.00
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PAS * * *
|
XX-Element Si (multi)
|
1000
- 350 nm
|
Custom
|
Custom
|
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OEM Board
|
±
15 VDC
|
Contact
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** SMA-BNC adapters optional
PHOTODETECTOR ARRAY ASSEMBLIES
SPECIFICATIONS:
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MODEL
|
Type
|
Spectrum
|
Gain (V/A)
|
Speed
|
Responsivity
|
Area
|
Dark Current
|
NEP (pW/rt.Hz)
|
Packaging **
|
Power
|
US / Intl.
|
|
STR * * *
|
XX-Detector SWIR InGaAs (fxd)
|
2600
- 1200 nm
|
Custom
|
Custom
|
1.05
A/W @ 2300 nm
|
0.3
mmD
|
<0.5 µA
|
10
|
OEM Board
|
±
15 VDC
|
Contact
|
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SJR * * *
|
XX-Detector SWIR InGaAs (mlt)
|
2600
- 1200 nm
|
Custom
|
Custom
|
1.05
A/W @ 2300 nm
|
0.3
mmD
|
<0.5 µA
|
10
|
OEM Board
|
±
15 VDC
|
Contact
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MODEL
|
Type
|
Spectrum
|
Gain (V/A)
|
Speed
|
Responsivity
|
Area
|
Dark Current
|
NEP (pW/rt.Hz)
|
Packaging **
|
Power
|
US / Intl.
|
|
AMR * * *
|
XX-Detector NIR InGaAs (fixed)
|
1800
- 800 nm
|
Custom
|
Custom
|
0.95 A/W @ 1550 nm
|
0.3
mmD
|
<0.04 nA
|
5
|
OEM Board
|
±
15 VDC
|
Contact
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AIR * * *
|
XX-Detector NIR InGaAs (multi)
|
1800
- 800 nm
|
Custom
|
Custom
|
0.95 A/W @ 1550 nm
|
0.3
mmD
|
<0.04 nA
|
5
|
OEM Board
|
±
15 VDC
|
Contact
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MODEL
|
Type
|
Spectrum
|
Gain (V/A)
|
Speed
|
Responsivity
|
Area
|
Dark Current
|
NEP (pW/rt.Hz)
|
Packaging **
|
Power
|
US / Intl.
|
|
ASP * * *
|
XX-Detector Si (fixed)
|
1000
- 350 nm
|
Custom
|
Custom
|
0.6
A/W @ 800 nm
|
0.7
mmD
|
< 0.01 nA
|
3
|
OEM Board
|
±
15 VDC
|
Contact
|
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|
SPA * * *
|
XX-Detector Si (multi)
|
1000
- 350 nm
|
Custom
|
Custom
|
0.6
A/W @ 800 nm
|
0.7
mmD
|
< 0.01 nA
|
3
|
OEM Board
|
±
15 VDC
|
Contact
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MODEL
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Type
|
Spectrum
|
Gain (V/A)
|
Speed
|
Responsivity
|
Area
|
Dark Current
|
NEP (pW/rt.Hz)
|
Packaging **
|
Power
|
US / Intl.
|
|
AUV * * *
|
XX-Detector UV-Si (fixed)
|
1000
- 190 nm
|
Custom
|
Custom
|
0.12
A/W @ 190 nm
|
1
mmD
|
|
6
|
OEM Board
|
±
15 VDC
|
Contact
|
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XUV * * *
|
XX-Detector UV-Si (multi)
|
1000
- 190 nm
|
Custom
|
Custom
|
0.12
A/W @ 190 nm
|
1
mmD
|
|
6
|
OEM Board
|
±
15 VDC
|
Contact
|
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** SMA-BNC adapters optional
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